Výsledky vyhľadávania - "MOSFET"

Adaptive Determination of Optimum Switching Frequency in SiC-PWM-based Motor Drives: A Speed-Dependent Core Loss Correction Approach

Autori: Amirpour, Sepideh Soltanipour, Sima Thiringer, Torbjörn a ďalší

Zdroj: IEEE Open Journal of the Industrial Electronics Society. 6:883-897

Predmety: IGBT, Sic, Mosfet, PWM

Popis súboru: electronic

Prístupová URL adresa: https://research.chalmers.se/publication/546713
https://research.chalmers.se/publication/546538
https://research.chalmers.se/publication/546713/file/546713_Fulltext.pdf

Comparative Study on Temperature Dependency of dV/dt, dI/dt and EMI Generation for IGBTs, Si and SiC MOSFETs

Autori: Peng Xue Pooya Davari

Zdroj: Davari, P 2025, 'Comparative Study on Temperature Dependency of dV/dt, dI/dt and EMI Generation for IGBTs, Si and SiC MOSFETs'. https://doi.org/10.1109/EMCEurope61644.2025.11176218

Predmety: dI/dt, temperature dependent, SiC MOSFET, EMI, dV /dt, IGBT, Si MOSFET

Popis súboru: application/pdf

Prístupová URL adresa: https://vbn.aau.dk/ws/files/798941092/EuMW_Paper.pdf
https://doi.org/10.1109/EMCEurope61644.2025.11176218
https://vbn.aau.dk/da/publications/62fca5a5-ba10-469a-9536-caf7ebc9c938

SiC MOSFETs C-V Capacitance Curves with Negative Biased Drain

Autori: Matacena I. Maresca L. Riccio M. a ďalší

Zdroj: Key Engineering Materials. 1022:9-14

Predmety: C-V curve, Capacitance, SiC MOSFET

Prístupová URL adresa: https://hdl.handle.net/11588/1013243
https://doi.org/10.4028/p-A8OKYn

Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs

Autori: Saulo G. Alberton Alexis C. Vilas-Bôas Marcilei A. Guazzelli a ďalší

Zdroj: IEEE Transactions on Device and Materials Reliability. 25:492-500

Predmety: charge collection, DMOSFET, neutrons, nuclear reaction, Power transistor, radiation effects, Single-Event Effect, trench MOSFET, UMOSFET

Popis súboru: application/pdf

Prístupová URL adresa: https://hdl.handle.net/11580/116924
https://doi.org/10.1109/TDMR.2025.3572829

The Effect of Number of Fins per Transistor on the TID Response of 12LP FinFET Technology

Autori: Trace Wallace Nathaniel A. Dodds Aldo I. Vidana a ďalší

Zdroj: IEEE Transactions on Nuclear Science. 72:2317-2323

Predmety: Fin-based field effect transistor (FinFET), MOSFET, radiation effects, total ionizing dose (TID), transistors, X-ray

Single Event Effects of SiC Power MOSFETs: From Neutron Interaction to Destruction at the Die Level

Autori: Germanicus, Rosine Coq Michez, Alain Niskanen, Kimmo a ďalší

Prispievatelia: Germanicus, Rosine Coq Michez, Alain Niskanen, Kimmo a ďalší

Zdroj: IEEE Transactions on Nuclear Science. 72:2368-2376

Predmety: Impact Ionization, Secondary Ion, [PHYS.NUCL] Physics [physics]/Nuclear Theory [nucl-th], [PHYS.NEXP] Physics [physics]/Nuclear Experiment [nucl-ex], Epitaxial Layer, Gate Oxide, Local Temperature, Specific Preparation, Failure Analysis, Single Event Effects, TCAD Simulation, Avionics, Silicon Carbide MOSFET, Heavy Ions, Energy-dispersive X-ray Spectroscopy, Neutron Energy, Catastrophic Events, Commercial Off-the-shelf, Breakdown Electric Field, Energy Dispersive X-ray, Silicon Carbide, High Electric Field, Specific Sample Preparation, Neutron Interactions, Pair Density, [SPI.TRON] Engineering Sciences [physics]/Electronics, Al Ions, Electric Potential Distribution, Silicon Carbide Power MOSFETs, Function Of Temperature, Scanning Electron Microscopy, Neutron Irradiation

Popis súboru: application/pdf

Evaluation and Suppression Method of Turn-off Current Spike for SiC/Si Hybrid Switch

Autori: Qin, Haihong Xie, Sixuan Ba, Zhenhua a ďalší

Zdroj: IEEE Access. 11:26832-26842

Predmety: MOSFET, current spike, Switches, suppression method, Delays, hybrid switch, SiC MOSFET/Si IGBT, Insulated gate bipolar transistors, Logic gates, Silicon carbide, Silicon

Popis súboru: electronic

Prístupová URL adresa: https://research.chalmers.se/publication/534955
https://research.chalmers.se/publication/534955/file/534955_Fulltext.pdf

A versatile framework for the statistical characterization of CMOS time-zero and time-dependent variability with array-based ICs

Autori: Díaz Fortuny, Javier

Prispievatelia: University/Department: Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica

Thesis Advisors: Martín Martínez, Javier, Rodríguez Martínez, Rosana

Zdroj: TDX (Tesis Doctorals en Xarxa)

Predmety: Circuit integrat, Circuito integrado, Integrated circuit, MOSFET, Variabilitat, Variabilidad, Variability, Tecnologies

Time: 621.3

Popis súboru: application/pdf

Prístupová URL adresa: http://hdl.handle.net/10803/667954

Evaluation of antiparallel SiC Schottky diode in SiC MOSFET phase-leg configuration of synchronous rectifier

Autori: Qin, Haihong Huang, Rongxia Hu, Haoxiang a ďalší

Zdroj: Energy Reports. 9:337-342

Predmety: SiC MOSFET, Phase-leg configuration, Anti-parallel, Synchronous rectification

Popis súboru: electronic

Prístupová URL adresa: https://research.chalmers.se/publication/537977
https://research.chalmers.se/publication/537977/file/537977_Fulltext.pdf

An 800W Four-Level Supply Modulator for Efficient Envelope Tracking of RF Transmitters

Autori: Nogales, Connor Popovic, Zoya Lasser, Gregor

Zdroj: IEEE Journal of Emerging and Selected Topics in Power Electronics. 11(3):3251-3260

Predmety: Multi-Level Converter, Power Amplifier, Power amplifiers, Radio frequency, Modulation, MOSFET, Envelope tracking, Supply Modulation, Hybrid power systems, Switches, Bandwidth, GaN

Popis súboru: electronic

Prístupová URL adresa: https://research.chalmers.se/publication/534938
https://research.chalmers.se/publication/534938/file/534938_Fulltext.pdf

Parallel Connection of Silicon Carbide MOSFETs - Challenges, Mechanism, and Solutions

Autori: Li, Helong Zhao, Shuang Wang, Xiongfei a ďalší

Zdroj: IEEE transactions on power electronics. 38(8):9731-9749

Predmety: Current imbalance, multichip power module, parallel connection, SiC metal oxide semiconductor field effect transistor (mosfet)

Popis súboru: print

Prístupová URL adresa: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-333024
https://doi.org/10.1109/TPEL.2023.3278270

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Autori: Bhadoria, Shubhangi Dijkhuizen, Frans Raj, Rishabh a ďalší

Zdroj: IEEE transactions on power electronics. 38(3):3569-3589

Predmety: Silicon carbide, Silicon, MOSFET, Multichip modules, Insulated gate bipolar transistors, Heating systems, Schottky diodes, Bonding techniques, high temperature, new layouts, overcurrent (OC), packaging, parasites, phase-change materials (PCMs), power modules, wide band gap semiconductors

Popis súboru: print

Prístupová URL adresa: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-324535
https://doi.org/10.1109/TPEL.2022.3223730

ON-OFF VE DEĞİŞKEN ON KONTROLLÜ ZVS E-SINIFI REZONANS EVİRİCİ İÇİN Si-IGBT ve SiC-MOSFET’in KARŞILAŞTIRILMASI

Autori: Salih Nacar

Zdroj: Volume: 28, Issue: 2601-612
Kahramanmaras Sutcu Imam University Journal of Engineering Sciences
Kahramanmaraş Sütçü İmam Üniversitesi Mühendislik Bilimleri Dergisi

Predmety: ZVS class-E inverter, Si IGBT, SiC MOSFET, on-off control, variable on-control, Devreler ve Sistemler, Circuits and Systems, ZVS E-sınıfı evirici, On-off kontrol, Değişken on kontrol

Popis súboru: application/pdf

Prístupová URL adresa: https://dergipark.org.tr/tr/pub/ksujes/issue/92254/1524047

Yüksek Hızlı AC Sürücülerde Çok Ölçütlü Karar Verme Yöntemleri ile Topoloji ve Anahtar Seçimi Uygulanması

Autori: Yıldırız, Gülsüm

Zdroj: Volume: 15, Issue: 221-29
EMO Bilimsel Dergi

Predmety: Si-IGBT, SiC-MOSFET, Anahtar seçimi, AHP, TOPSIS, Electrical Machines and Drives, Elektrik Makineleri ve Sürücüler

Popis súboru: application/pdf

Prístupová URL adresa: https://dergipark.org.tr/tr/pub/emobd/issue/92003/1599023

Proton Energy Dependence of SiC Power MOSFET Single-Event Burnout Sensitivity

Autori: K. Niskanen A. Javanainen C. Martinella a ďalší

Zdroj: IEEE Transactions on Nuclear Science, 72 (4)

Predmety: Accelerator Laboratory, protonit, silicon carbide (SiC), säteilyfysiikka, puolijohteet, ionisoiva säteily, single event burnout (SEB), Kiihdytinlaboratorio, transistorit, proton irradiation, single-event burnout (SEB), Power MOSFET

Popis súboru: application/pdf; fulltext; application/application/pdf

Prístupová URL adresa: http://urn.fi/URN:NBN:fi:jyu-202503192644
http://hdl.handle.net/20.500.11850/733881

Temperature Dependence of Heavy-Ion-Induced Leakage Current in SiC Power MOSFETs

Autori: K. Niskanen C. Martinella A. Sengupta a ďalší

Zdroj: IEEE Transactions on Nuclear Science, 72 (4)

Predmety: Heavy-ion irradiation, power MOSFET, silicon carbide (SiC), single-event leakage current (SELC), temperature, Accelerator Laboratory, silicon carbide ( SiC ), single event leakage current (SELC), Kiihdytinlaboratorio, hiukkasfysiikka, ydinfysiikka, heavy-ion irradiation

Popis súboru: application/pdf; fulltext; application/application/pdf

Prístupová URL adresa: http://urn.fi/URN:NBN:fi:jyu-202504283514
http://hdl.handle.net/20.500.11850/733880

On the Vulnerability of UMOSFETs in Terrestrial Radiation Environments

Autori: Saulo G. Alberton Alexis C. V. Bôas Jeffery Wyss a ďalší

Zdroj: IEEE Access, Vol 13, Pp 53885-53894 (2025)

Predmety: trench MOSFET, DMOSFET, Neutrons, Atmospheric modeling, MOSFET, Logic gates, Computational modeling, Silicon, Voltage measurement, Silicon carbide, Particle beams, Atmospheric measurements, Radiation effects, power transistor, UMOSFET, atmospheric neutrons, single-event effect, single-event burnout, single-event gate rupture, FOS: Physical sciences, Electrical engineering. Electronics. Nuclear engineering, Physics - Applied Physics, Applied Physics (physics.app-ph), TK1-9971

Popis súboru: application/pdf

Prístupová URL adresa: http://arxiv.org/abs/2502.13041
https://doaj.org/article/6d094660c43a40c3bf682e816e2ec74d

Recombination-Driven Interface Trap Generation in SiC MOSFETs Under Constant Voltage and Constant Current Stress

Autori: Marcuzzi, A. Avramenko, M. De Santi, C. a ďalší

Zdroj: 2025 IEEE International Reliability Physics Symposium (IRPS). :1-5

Predmety: Charge carrier processes, Charge pumping, Leakage currents, MOSFET, Silicon carbide, Threshold voltage

Prístupová URL adresa: https://hdl.handle.net/11577/3561495
https://doi.org/10.1109/irps48204.2025.10982738

Innovative gate driver structure achieving low time skew across isolation barrier for parallel connected SiC modules

Autori: Gouy, Louison Descamps, Anne-Sophie Ginot, Nicolas a ďalší

Prispievatelia: Gouy, Louison Descamps, Anne-Sophie Ginot, Nicolas a ďalší

Zdroj: 2025 IEEE Applied Power Electronics Conference and Exposition (APEC). :1076-1083

Predmety: Gate driver, current sharing, MOSFET, [SPI] Engineering Sciences [physics], Jitter, gate driver topologies, paralleled power modules, Silicon carbide (SiC)

NEGF Based Analytical Modeling of Advanced MOSFETs

Autori: Hosenfeld, Fabian

Prispievatelia: University/Department: Universitat Rovira i Virgili. Departament d'Enginyeria Electrònica, Elèctrica i Automàtica

Thesis Advisors: Gilbert Marie Lime, François, Iñiguez Nicolau, Benjamin, Gunther klös, Alexander

Zdroj: TDX (Tesis Doctorals en Xarxa)

Predmety: MOSFET d'ultraescala, modelatge analític, NEGF, MOSFET ultra-escalado, modelado analítico, ultra-scaled MOSFET, analytical modeling, Enginyeria i Arquitectura

Time: 621.3

Popis súboru: application/pdf

Prístupová URL adresa: http://hdl.handle.net/10803/462901