Suchergebnisse - "MODFETs"
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1
Autoren: et al.
Quelle: IEEE Transactions on Electron Devices. 72(8):4042-4048
Schlagwörter: Logic gates, MODFETs, HEMTs, Pulse measurements, Iron, Cryogenics, Current measurement, Electron traps, Lighting, Performance evaluation, Cryogenic, field plates (FPs), GaN high electron mobility transistors (HEMTs), iron (Fe), traps
Dateibeschreibung: electronic
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2
Autoren:
Quelle: IEEE Microwave Magazine. 26:18-31
Schlagwörter: Radio frequency, Microwave measurement, Performance evaluation, HEMTs, Microwave transistors, Reliability, Gallium nitride, MODFETs, Transient analysis, Systematic literature review
Dateibeschreibung: application/pdf
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3
Autoren: et al.
Weitere Verfasser: et al.
Quelle: 2025 IEEE International Reliability Physics Symposium (IRPS). :1-6
Schlagwörter: QAM, Gate Reliability, 2DEG, MISHEMT, MOCVD, power amplifier (PA), Threshold Voltage Instability, MODFETs, GaN MISHEMT, gallium nitride (GaN), PAPR, 5G, OFDM
Zugangs-URL: https://biblio.vub.ac.be/vubir/perspectives-on-gan-mishemt-power-amplifier-versus-positive-gate-bias-instability(d6e36f86-d8d5-4866-aec4-c0b2246df4b1).html
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4
Autoren: et al.
Quelle: IEEE Electron Device Letters. 46:369-372
Schlagwörter: Transient analysis, MODFETs, Logic gates, HEMTs, Stress, Ionization, Electrons, Electron traps, Wide band gap semiconductors, Transconductance, Buffer-free AlGaN/GaN HEMTs, deep level effects, drain current transient, photoionization
Dateibeschreibung: application/pdf
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5
Autoren: et al.
Quelle: IEEE TRANSACTIONS ON ELECTRON DEVICES
IEEE Transactions on Electron DevicesSchlagwörter: Mathematical models, Technology and Engineering, breakdown, HEMTs, AVALANCHE BREAKDOWN VOLTAGE, THRESHOLD VOLTAGE, junction voltage, MODFETs, Logic gates, forward bias gate leakage current, Aluminum gallium nitride, Wide band gap semiconductors, p-GaN gate HEMTs, p-GaN doping engineering, DENSITY, Semiconductor process modeling, uniform p-GaN doping, Barrier voltage
Dateibeschreibung: application/pdf
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6
Autoren: et al.
Quelle: IEEE ELECTRON DEVICE LETTERS
Schlagwörter: Technology and Engineering, Electric fields, reliability, breakdown, HEMTs, Layout, MODFETs, Logic gates, Gallium nitride, BREAKDOWN, Stress, FREQUENCY, Gallium nitride, HEMTs, reliability, Schottky gate, breakdown, time to failure, gate layout, time to failure, Physics and Astronomy, RELIABILITY, Schottky gate, Electric breakdown, gate layout
Dateibeschreibung: application/pdf
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7
Autoren: et al.
Quelle: IEEE TRANSACTIONS ON ELECTRON DEVICES
IEEE Transactions on Electron DevicesSchlagwörter: Technology and Engineering, HEMTs, THRESHOLD VOLTAGE, junction voltage, MODFETs, Logic gates, forward bias gate leakage current, Aluminum gallium nitride, Breakdown voltage, Wide band gap semiconductors, Leakage currents, engineered gradient p-GaN doping, gate leakage, p-GaN gate high-electron-mobility transistors (HEMTs), DENSITY, Semiconductor process modeling, uniform p-GaN doping
Dateibeschreibung: application/pdf
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8
Autoren: et al.
Quelle: IEEE Electron Device Letters. 45:1265-1268
Schlagwörter: Junctions, Electrostatic discharges, HEMTs, MODFETs, ESD, Logic gates, P-GaN gate HEMT, MOSFET, SiC MOSFET, Gate current, Robustness, pulsed I-V
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9
Autoren: et al.
Quelle: IEEE Electron Device Letters. 45:1157-1160
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10
Autoren: et al.
Quelle: IEEE Transactions on Industrial Electronics. 71:3113-3121
Schlagwörter: Silicon, Electrostatic discharges, HEMTs, Human body model, MODFETs, Evaluation method, Logic gates, Voltage measurement, 02 engineering and technology, 01 natural sciences, MOSFET, Electrostatic discharge, Schottky p-GaN gate HEMT, Transmission line pulse, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Pulse I-V
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11
Autoren: et al.
Quelle: IEEE Transactions on Electron Devices. 71(6):3596-3602
Schlagwörter: MODFETs, HEMTs, Aluminum gallium nitride, Wide band gap semiconductors, Epitaxial growth, AlGaN/GaN, back-barrier, Logic gates, Electrons, short channel effect (SCE), dispersion, high electron mobility transistors (HEMTs), double heterostructure
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12
Autoren: et al.
Quelle: IEEE Transactions on Components, Packaging and Manufacturing Technology. 14(5):891-896
Schlagwörter: Sensor phenomena and characterization, Semiconductor device packaging, Thermal sensors, Temperature sensors, Sensors, MMIC, MODFETs, GaN, Resistors, Electro-thermal effects, Monitoring, Temperature measurement
Zugangs-URL: https://research.chalmers.se/publication/540876
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13
Autoren: et al.
Quelle: IEEE Transactions on Electron Devices. 71(12):7383-7389
Schlagwörter: MODFETs, Logic gates, HEMTs, Wide band gap semiconductors, Aluminum gallium nitride, Voltage measurement, Electrons, Threshold voltage, Semiconductor device measurement, Physics, Drain current injection technique (DCIT), drain-induced barrier lowering (DIBL), GaN, high electron mobility transistor (HEMT), short-channel effect (SCE)
Dateibeschreibung: print
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14
Autoren: et al.
Quelle: IEEE Journal of the Electron Devices Society, Vol 12, Pp 201-210 (2024)
Schlagwörter: kink effect, GaN HEMT, GRU, machine learning methods, scattering parameter measurements, semiconductor device modeling, temperature, Analytical models, Behavioral sciences, Data models, Logic gates, MODFETs, Numerical models, Training, Electrical engineering. Electronics. Nuclear engineering, 7. Clean energy, TK1-9971
Dateibeschreibung: application/pdf
Zugangs-URL: https://doaj.org/article/c0ed1c01d72b468fb27c1aa3558028dc
https://hdl.handle.net/10281/516600
https://doi.org/10.1109/JEDS.2024.3364809
https://ieeexplore.ieee.org/document/10433010
https://hdl.handle.net/11392/2544830
https://doi.org/10.1109/JEDS.2024.3364809
https://hdl.handle.net/11570/3290908
https://doi.org/10.1109/JEDS.2024.3364809 -
15
Autoren: et al.
Quelle: IEEE Transactions on Device and Materials Reliability. 23:453-460
Schlagwörter: GaN HEMTs, Step Stress, Carbon Doping, Hot Electrons, Reliability, Carbon Doping, Degradation, Electron traps, GaN HEMTs, HEMTs, Hot Electrons, Logic gates, MODFETs, Reliability, Step Stress, Stress, Wide band gap semiconductors
Dateibeschreibung: application/pdf
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16
Autoren: et al.
Quelle: IEEE Transactions on Electron Devices. 70:5590-5595
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17
Autoren: et al.
Weitere Verfasser: et al.
Quelle: IEEE Transactions on Electron Devices[ISSN 0018-9383], (Enero 2023)
accedaCRIS portal de investigación de la Universidad de las Palmas de Gran Canaria
instnameSchlagwörter: Thermal Analysis, Thermal Impedance, Impedance, Temperature Measurement, Thermal Resistance, Logic Gates, 7. Clean energy, Gallium Nitride, High-Electron-Mobility Transistors (Hemts), 3307 Tecnología electrónica, D-Hemts, Ac Measurement, Modfets, Electrothermal Characterization
Zugangs-URL: http://hdl.handle.net/10553/128676
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18
Autoren: et al.
Quelle: IEEE TRANSACTIONS ON ELECTRON DEVICES ; ISSN: 0018-9383 ; ISSN: 1557-9646
Schlagwörter: Technology and Engineering, Substrates, HEMTs, MODFETs, Stress, Current measurement, Transient, analysis, Voltage measurement, Epitaxial growth, Stress measurement, P-n, junctions, Carbon-doped GaN, charge transportation, GaN, GaN power high, electron mobility transistor (HEMT)
Dateibeschreibung: application/pdf
Relation: https://biblio.ugent.be/publication/01K9YDC775RS80XAZWPWQ34M3X; https://doi.org/10.1109/TED.2025.3571004; https://biblio.ugent.be/publication/01K9YDC775RS80XAZWPWQ34M3X/file/01K9YDDEBRB6P3RFFXWWREPK8M
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19
Autoren: et al.
Quelle: IEEE TRANSACTIONS ON ELECTRON DEVICES ; ISSN: 0018-9383 ; ISSN: 1557-9646
Schlagwörter: Technology and Engineering, Capacitance, Logic gates, HEMTs, MODFETs, Capacitance measurement, Couplings, Substrates, Mathematical models, Voltage measurement, Performance evaluation, Back-gating effect, bulk capacitance, bulk, coupling effects, bulk voltage dependency, channel length modulation, (CLM), drain voltage dependency, lateral 2-D electron gas (2DEG), depletion, MVSG model, p-gallium nitride (GaN) gate, high-electron-mobility transistors (HEMTs), silicon-on-insulator (SOI)
Dateibeschreibung: application/pdf
Relation: https://biblio.ugent.be/publication/01K2CMZK35F1ZBFT5D99WC4J8P; https://doi.org/10.1109/ted.2025.3593216; https://biblio.ugent.be/publication/01K2CMZK35F1ZBFT5D99WC4J8P/file/01K9YP98W8WEX3JWP8EK8TCPNA
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20
Autoren: et al.
Quelle: GREDOS. Repositorio Institucional de la Universidad de Salamanca
Universidad de Salamanca (USAL)Schlagwörter: HEMTs, Transistors, Electronic, 3307.08 Dispositivos de Microondas, MODFETs, 02 engineering and technology, Transistors, 7. Clean energy, 3307.19 Transistores, 3307.11 Receptores de Radio, semiconductores, Gallium Nitride, Zero-bias detectors, Semiconductors, 0202 electrical engineering, electronic engineering, information engineering, microondas, 3307.14 Dispositivos Semiconductores, Microwaves, transistores electrónicos
Dateibeschreibung: application/pdf
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