Suchergebnisse - "MOCVD"

Study on Metal-Oxide Field Effect Transistors of ß-Gallium Oxide with AlGaO Spacer Layer Grown on Sapphire for High-Power Device Applications

Autoren: Chung, Sheng-Ti Li, Bing-Hang Langpoklakpam, Catherine et al.

Quelle: ACS Applied Electronic Materials. 7(7):2767-2775

Schlagwörter: Ga2O3, MOCVD, two-dimensionalelectron gas (2DEG), AlGaO, high voltage

Dateibeschreibung: electronic

Zugangs-URL: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-212724
https://doi.org/10.1021/acsaelm.4c02230

Synthesis and device integration of two-dimensional MOCVD MoS2 films

Autoren: Schäfer, Christian Martin

Thesis Advisors: Garrido Ariza, José Antonio, Sort Viñas, Jordi

Quelle: TDX (Tesis Doctorals en Xarxa)

Schlagwörter: Materials 2D, Materiales 2D, 2D materials, MoS2, MOCVD, Ciències Experimentals

Dateibeschreibung: application/pdf

Zugangs-URL: http://hdl.handle.net/10803/689757

Effect of the AlGaO Spacer Layer on the Performance of ß-Gallium Oxide Metal-Oxide Semiconductor Field Effect Transistors

Autoren: Chung, Sheng-Ti Langpoklakpam, Catherine Dong, Yicong et al.

Quelle: Advanced Electronic Materials. 11(15)

Schlagwörter: (AlxGa1-x)(2)O-3, two dimensional electron gas (2DEG), Ga2O3, high breakdown voltage, MOCVD

Dateibeschreibung: electronic

Zugangs-URL: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-216520
https://doi.org/10.1002/aelm.202500291

Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar)

Autoren: Zhang, Hengfang Chen, Jr-Tai Papamichail, Alexis et al.

Quelle: Journal of Crystal Growth. 651

Schlagwörter: N-polar GaN, epitaxial growth, SiC substrate misorientation angle, Multi-step temperature growth, MOCVD

Dateibeschreibung: electronic

Zugangs-URL: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-210437
https://liu.diva-portal.org/smash/get/diva2:1921430/FULLTEXT01.pdf

Unleashing the Impact of Topological Surface States on the Thermoelectric Properties of Granular Sb2Te3 Thin Films Deposited on Flexible Substrates

Autoren: Locatelli, Lorenzo Rossi, Pietro Kumar, Arun et al.

Weitere Verfasser: Locatelli, Lorenzo Rossi, Pietro Kumar, Arun et al.

Quelle: ACS Appl Mater Interfaces
Digital.CSIC. Repositorio Institucional del CSIC
Consejo Superior de Investigaciones Científicas (CSIC)
ACS Applied Materials & Interfaces

Schlagwörter: MOCVD, Sb2Te3, Flexible thermoelectrics, Topological insulators, Thin film, Research Article

Zugangs-URL: https://api.elsevier.com/content/abstract/scopus_id/105007928286
http://hdl.handle.net/10261/396346

Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability

Autoren: Yu, Hao Elkashlan, Rana Tsai, Meng-Che et al.

Weitere Verfasser: Yu, Hao Elkashlan, Rana Tsai, Meng-Che et al.

Quelle: 2025 IEEE International Reliability Physics Symposium (IRPS). :1-6

Schlagwörter: QAM, Gate Reliability, 2DEG, MISHEMT, MOCVD, power amplifier (PA), Threshold Voltage Instability, MODFETs, GaN MISHEMT, gallium nitride (GaN), PAPR, 5G, OFDM

Zugangs-URL: https://biblio.vub.ac.be/vubir/perspectives-on-gan-mishemt-power-amplifier-versus-positive-gate-bias-instability(d6e36f86-d8d5-4866-aec4-c0b2246df4b1).html

Phase Controlled Metalorganic Chemical Vapor Deposition Growth of Wafer-Scale Molybdenum Ditelluride

Autoren: Kim, Bum Jun Tseng, Derick Dang, David et al.

Quelle: ACS Nanoscience Au. 5(1)

Schlagwörter: Engineering, Physical Sciences, Condensed Matter Physics, MOCVD, MoTe2, polymorph, exciton-phonon coupling, vacancies

Dateibeschreibung: application/pdf

Zugangs-URL: https://escholarship.org/uc/item/6156s7sr
https://escholarship.org/content/qt6156s7sr/qt6156s7sr.pdf

Mixed Co-Mn oxide coatings synthetized by DLI-MOCVD for SOC interconnect a parametric study for composition and homogeneity control

Autoren: R. Chanson F. Miserque F. Schuster et al.

Quelle: Scientific Reports, Vol 15, Iss 1, Pp 1-10 (2025)

Schlagwörter: Coating, Oxidation, MOCVD, Cobalt, Manganese, Spinel, Medicine, Science

Dateibeschreibung: electronic resource

Relation: https://doaj.org/toc/2045-2322

Zugangs-URL: https://doaj.org/article/419fafb595a64730a86cd70e1fc3e201

Scalable InAs/InGaAs DWELL structures for broadband infrared emission spanning the E- to O-band

Autoren: Driss Mouloua Mickael Martin Bouraoui Ilahi et al.

Quelle: Scientific Reports, Vol 15, Iss 1, Pp 1-11 (2025)

Schlagwörter: InAs/InGaAs DWELL, MOCVD, Infrared emission, Optoelectronics, Photoluminescence, Medicine, Science

Dateibeschreibung: electronic resource

Relation: https://doaj.org/toc/2045-2322

Zugangs-URL: https://doaj.org/article/2f8dcfc05cbe4638913a52b6d502d094

Contact Resistance Optimization in MoS2 Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

Autoren: Yuan Fa Agata Piacentini Bart Macco et al.

Quelle: ACS Appl Mater Interfaces
ACS applied materials & interfaces 17(16), 24526-24534 (2025). doi:10.1021/acsami.4c21596

Schlagwörter: structural modification, MoS −FETs, Condensed Matter - Materials Science, argon ion treatment, Condensed Matter - Mesoscale and Nanoscale Physics, contact resistance, reverse sputtering, MOCVD, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences

Zugangs-URL: https://pubmed.ncbi.nlm.nih.gov/40067176
http://arxiv.org/abs/2412.08663
https://research.tue.nl/en/publications/1c2bd3c6-ca7f-4886-afe4-6ee507b4e143
https://doi.org/10.1021/acsami.4c21596
https://publications.rwth-aachen.de/record/1008726

Challenges and Advances in Materials and Fabrication Technologies for the Development of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

Autoren: J. Ajayan Vakkalakula Bharath Sreenivasulu N. Aruna Kumari et al.

Quelle: IEEE Access, Vol 13, Pp 62045-62059 (2025)

Schlagwörter: gate reliability, plasma treatment, MOCVD, Electrical engineering. Electronics. Nuclear engineering, Dynamic-ON-resistance (RON), p-GaN gate, TK1-9971

Zugangs-URL: https://doaj.org/article/5e1743619903449185ee1b5c9cddf827

Direct Measurement of the Thermal Expansion Coefficient of Epitaxial WSe2 by Four-Dimensional Scanning Transmission Electron Microscopy.

Autoren: Kucinski, Theresa Dhall, Rohan Savitzky, Benjamin et al.

Quelle: ACS Nano. 18(27)

Schlagwörter: 2D materials, 4D-STEM, MOCVD, orientation, strain, thermal expansion

Dateibeschreibung: application/pdf

Zugangs-URL: https://escholarship.org/uc/item/8qb0q2fr
https://escholarship.org/content/qt8qb0q2fr/qt8qb0q2fr.pdf

ANALYSIS OF THE STRUCTURE OF INTERFERENCE COATINGS FOR THE OPTIMIZATION OF THE PARAMETERS OF NARROWBAND OPTICAL FILTERS

Autoren: Andriy Voronko Denys Novikov Dmytro Verbitskiy et al.

Weitere Verfasser: Andriy Voronko Denys Novikov Dmytro Verbitskiy et al.

Quelle: Bulletin of Kyiv Polytechnic Institute. Series Instrument Making. :18-23

Schlagwörter: optical properties, stability of characteristics, ГФЕ МОС, стабільність характеристик, MOCVD, вузькосмугові фільтри, narrowband filters, оптичні властивості, інтерференційні покриття, interference coatings

Dateibeschreibung: application/pdf

Zugangs-URL: https://ela.kpi.ua/handle/123456789/73056

Chemical vapor deposition of Tm3Fe5O12 epitaxial films, investigation of their structure and properties in the terahertz range

Autoren: Maria N. Markelova Abduvosit A. Hafizov Xiaoyu Shi et al.

Quelle: Конденсированные среды и межфазные границы, Vol 27, Iss 1 (2025)

Schlagwörter: iron garnets, Chemistry, raman spectroscopy, thin films, mocvd, antisite defects, structure, terahertz spectroscopy, QD1-999

Zugangs-URL: https://doaj.org/article/412f1c4390c14cb89f92fc0e1bb0b419

Highly Efficient Current‐Induced Torques Originating from Topological Surface States in Sb2Te3

Autoren: Matteo Fettizio Can Onur Avci Roberto Mantovan et al.

Quelle: Advanced Electronic Materials, Vol 11, Iss 18, Pp n/a-n/a (2025)

Schlagwörter: charge‐to‐spin conversion, Harmonic magnetoresistance, MOCVD, SMR, spin orbit torque, spintronics, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

Dateibeschreibung: electronic resource

Relation: https://doaj.org/toc/2199-160X

Zugangs-URL: https://doaj.org/article/ece6b1f5bd0b4e3cbbce93bc406a6df9

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

Autoren: Vilasam, Aswani Gopakumar Saraswathy Adhikari, Sonachand Gupta, Bikesh et al.

Quelle: Nanotechnology. 34(49)

Schlagwörter: Physical Sciences, Engineering, Nanotechnology, Condensed Matter Physics, InAs, nanowires, MOCVD, van der waals epitaxy, polycrystalline thin film, MSD-General, MSD-EMAT, Nanoscience & Nanotechnology

Dateibeschreibung: application/pdf

Zugangs-URL: https://escholarship.org/uc/item/2xn4t9x3
https://escholarship.org/content/qt2xn4t9x3/qt2xn4t9x3.pdf

Continuous wave operation of broad area and ridge waveguide laser diodes at 626 nm

Autoren: Felix Mauerhoff Oktay Senel Hans Wenzel et al.

Quelle: IET Optoelectronics, Vol 18, Iss 5, Pp 140-145 (2024)

Schlagwörter: III‐V semiconductors, fabry‐perot resonators, MOCVD, 0103 physical sciences, Applied optics. Photonics, semiconductor epitaxial layers, semiconductor lasers, 02 engineering and technology, 0210 nano-technology, 01 natural sciences, semiconductor quantum wells, TA1501-1820

Zugangs-URL: https://doaj.org/article/af4b5b5307a84cf5bfc34445bd5fa6bb

Growth of p-type GaN - The role of oxygen in activation of Mg-doping

Autoren: Kumar, Ashutosh Berg, Martin Wang, Qin et al.

Quelle: Power Electronic Devices and Components. 5

Schlagwörter: p-type GaN, Mg-doping, Activation annealing, MOCVD, SIMS

Dateibeschreibung: electronic

Zugangs-URL: https://urn.kb.se/resolve?urn=urn:nbn:se:ri:diva-64917
https://doi.org/10.1016/j.pedc.2023.100036

Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

Autoren: Stanishev, Vallery Armakavicius, Nerijus Gogova, Daniela et al.

Quelle: Center for III Nitride semiconductor technology (C3NiT) fas2 III-nitrider med låg defekttäthet för grön kraftelektronik Vacuum. 217

Schlagwörter: AlGaN, GaN, MOCVD, Structural properties, Electrical properties

Dateibeschreibung: electronic

Zugangs-URL: https://research.chalmers.se/publication/537559
https://research.chalmers.se/publication/537559/file/537559_Fulltext.pdf

beta-Ga2O3 MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD

Autoren: Lu, Chan-Hung Tarntair, Fu-Gow Kao, Yu-Cheng et al.

Quelle: DISCOVER NANO. 18(1)

Schlagwörter: High power MOSFETs, Enhancement mode, beta-Ga2O3, Recessed gate, MOCVD

Dateibeschreibung: electronic

Zugangs-URL: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-196762
https://liu.diva-portal.org/smash/get/diva2:1790482/FULLTEXT01.pdf