Výsledky vyhľadávania - "ION implantation"

p-type layer formation study for Ga2O3 by employing Ni ion implantation with two-step oxygen plasma and thermal annealing.

Autori: Shimizu, Naohiro Dhasiyan, Arun Kumar Oda, Osamu a ďalší

Zdroj: Journal of Applied Physics. 8/14/2025, Vol. 138 Issue 6, p1-12. 12p.

Predmety: *NICKEL alloys, *ION implantation, *OXYGEN plasmas, *CRYSTALLINITY, *COMPOUND semiconductors

Self-ion implantation and structural relaxation in amorphous silicon.

Autori: Gibson, J. M. Elliman, Rob Susi, T. a ďalší

Zdroj: Journal of Applied Physics. 7/28/2025, Vol. 138 Issue 4, p1-9. 9p.

Predmety: *AMORPHOUS silicon, *ION implantation, *RAPID thermal processing

Formation yield of germanium-vacancy centers in diamond upon keV ion nano-implantation and thermal annealing.

Autori: Pugliese, Vanna Gavello, Gaia Hernandez, Elena Nieto a ďalší

Zdroj: Journal of Applied Physics. 7/28/2025, Vol. 138 Issue 4, p1-9. 9p.

Predmety: *ION implantation, *DIAMONDS, *PHOTOLUMINESCENCE, *FABRICATION (Manufacturing), *HEAT treatment, *QUANTUM computers, *FOCUSED ion beams

Impacts of ultra-high-pressure annealing on undoped and ion-implanted GaN studied by photoluminescence measurements.

Autori: Shima, K. Narita, T. Uedono, A. a ďalší

Zdroj: Journal of Applied Physics. 6/21/2025, Vol. 137 Issue 23, p1-12. 12p.

Predmety: *ION implantation, *EPITAXIAL layers, *PHOTOLUMINESCENCE measurement, *GALLIUM nitride, *TIME-resolved measurements

The origin of degradation in electrical properties by ion implantation doping of boron in diamond.

Autori: Seki, Yuhei Yoshihara, Minami Hoshino, Yasushi

Zdroj: Journal of Applied Physics. 5/14/2025, Vol. 137 Issue 18, p1-10. 10p.

Predmety: *ION implantation, *IONIZATION energy, *SPACE charge, *ION bombardment, *ION mobility

Theoretical investigation of preparation pathways that enhance the equilibrium yield of negatively ionized tin-vacancy centers in N-doped diamond.

Autori: Bahulikar, Aditya Richardson, Steven L. Kuate Defo, Rodrick

Zdroj: Journal of Applied Physics. 5/7/2025, Vol. 137 Issue 17, p1-19. 19p.

Predmety: *ARTIFICIAL diamonds, *ION implantation, *DENSITY functional theory, *ENERGY industries, *TIN

Development of regular vertical p-n junction on nanocrystalline PbTe film.

Autori: Jarashneli, A. Towe, E. Auslender, M. a ďalší

Zdroj: Journal of Applied Physics. 3/14/2025, Vol. 137 Issue 10, p1-11. 11p.

Predmety: *CHARGE carrier lifetime, *ION implantation, *VAPOR-plating, *SURFACE roughness, *CRYSTAL grain boundaries, *CHARGE carriers

Electrical properties of ScN thin films controlled by defect engineering using oxygen ion implantation.

Autori: Poterie, Charlotte Bouteiller, Hugo Burcea, Razvan a ďalší

Zdroj: Journal of Applied Physics. 1/7/2025, Vol. 137 Issue 1, p1-11. 11p.

Predmety: *SEEBECK coefficient, *ION implantation, *ELECTRON scattering, *CARRIER density, *AUTOMATIC control systems

Ultraheavy boron doping of diamond by ion implantation for low-resistance layer formation: Effect of hot implantation.

Autori: Imamura, Kaiya Seki, Yuhei Hoshino, Yasushi

Zdroj: Journal of Applied Physics; 10/14/2025, Vol. 138 Issue 14, p1-10, 10p

Predmety: BORON, SEMICONDUCTOR doping, DIAMONDS, ION implantation, ELECTRIC properties

Smart Cut Transfer of Wide‐Bandgap Materials: The Case of Diamond.

Autori: Widiez, Julie Chrétien, Jérémie Masante, Cédric a ďalší

Zdroj: Physica Status Solidi. A: Applications & Materials Science. Nov2025, p1. 12p. 16 Illustrations.

Predmety: *DIAMONDS, *ION implantation, *HEAT treatment, *WIDE gap semiconductors, *QUANTUM computers, *CRYSTAL structure

Constructing Fe4+‐N4S Coordination via S+ Ion Implantation for Highly Activating Photocatalytic CO2RR.

Autori: Jiang, Tao Wu, Shixin Xing, Zhuo a ďalší

Zdroj: Advanced Functional Materials. Nov2025, p1. 14p. 7 Illustrations.

Predmety: *CARBON dioxide reduction, *ION implantation, *PHOTOCATALYSIS, *CHARGE exchange, *SULFURATION, *QUANTUM efficiency, *METAL complexes, *CATALYSTS

Modulating Oxide‐Based Quantum Materials by Ion Implantation.

Autori: Herklotz, Andreas Ward, Thomas Zac Zhou, Shengqiang

Zdroj: Advanced Functional Materials. 10/22/2025, Vol. 35 Issue 43, p1-13. 13p.

Predmety: *ION implantation, *METAL-insulator transitions, *ELECTRON configuration, *MATERIALS science, *MAGNETISM, *QUANTUM computers, *SUPERCONDUCTIVITY

Surface and structural changes in SiC pre-implanted with helium, silver, and strontium after annealing, and their effect on silver and strontium migration.

Autori: Ntshobeni, G. Abdalla, Z.A.Y. Abdelbagi, H.A.A. a ďalší

Zdroj: Ceramics International. Oct2025:Part C, Vol. 51 Issue 25, p46891-46902. 12p.

Predmety: *ION implantation, *RECRYSTALLIZATION (Metallurgy), *SURFACE properties, *HEALING, *HIGH temperatures, *STRONTIUM

Ion‐Implantation, Epilayer Growth, and Lift‐Off of High‐Quality Diamond Films.

Autori: Zhang, Xiang Pieshkov, Tymofii S. Chen, Di a ďalší

Zdroj: Advanced Functional Materials. Oct2025, Vol. 35 Issue 40, p1-9. 9p.

Predmety: *DIAMOND films, *ION implantation, *ENERGY dissipation, *EPITAXY, *POWER electronics, *QUANTUM computers, *SEPARATION (Technology)

High-Vacuum Tribological Behaviors of Wear-Resistant WC/a-C:H Coatings with Strong Adhesion on Zirconia.

Autori: Li, Zeqing Li, Liang Zhang, Honghong a ďalší

Zdroj: Materials (1996-1944). Oct2025, Vol. 18 Issue 19, p4560. 15p.

Predmety: *ZIRCONIUM oxide, *ION implantation, *PROTECTIVE coatings, *WEAR resistance, *SURFACE coatings, *ULTRAHIGH vacuum, *BOND strengths, *INTERFACIAL friction

p-type layer formation study for Ga2O3 by employing Ni ion implantation with two-step oxygen plasma and thermal annealing.

Autori: Shimizu, Naohiro Dhasiyan, Arun Kumar Oda, Osamu a ďalší

Zdroj: Journal of Applied Physics; 8/14/2025, Vol. 138 Issue 6, p1-12, 12p

Predmety: NICKEL alloys, ION implantation, OXYGEN plasmas, CRYSTALLINITY, COMPOUND semiconductors

Boron distribution in two-phase superconducting silicon-on-insulator by atom probe tomography.

Autori: Dumas, P. Duguay, S. Blavette, D. a ďalší

Zdroj: Journal of Applied Physics; 8/7/2025, Vol. 138 Issue 5, p1-7, 7p

Predmety: BORON, SUPERCONDUCTIVITY, PULSED lasers, ION implantation, PRECIPITATION (Chemistry), ATOM-probe tomography, SUPERCONDUCTORS

The effects of different anode manufacturing methods on deep levels in 4H-SiC p⁺n diodes.

Autori: Alfieri, G. Bolat, S. Nipoti, R.

Zdroj: Journal of Applied Physics. 6/21/2024, Vol. 135 Issue 23, p1-5. 5p.

Predmety: *PLASMA immersion ion implantation, *CHARGE carrier lifetime, *DIODES, *ANODES, *ION implantation, *EPITAXY

Deep learning-based characterization of ion implantation parameters for photo modulated optical reflectance.

Autori: Wang, Xuesong Zhang, Lijun Sun, Yong a ďalší

Zdroj: Journal of Applied Physics. 8/14/2024, Vol. 136 Issue 6, p1-9. 9p.

Predmety: *ION implantation, *ION bombardment, *INTEGRATED circuits, *DOPING agents (Chemistry), *TRANSISTORS, *BORON isotopes, *DEEP learning

Thermally stable photoluminescence centers at 1240 nm in silicon obtained by irradiation of the SiO2/Si system.

Autori: Nikolskaya, Alena Korolev, Dmitry Mikhaylov, Alexey a ďalší

Zdroj: Journal of Applied Physics. 6/7/2024, Vol. 135 Issue 21, p1-15. 15p.

Predmety: *ION implantation, *IRRADIATION, *THERMAL resistance, *SILICON, *OPTICAL devices