Suchergebnisse - "HETEROSTRUCTURES"

ULTRARAM beyond the lab: Interface and integration challenges in III–V memory devices.

Autoren: Lane, Dominic¹ dominic.lane@adelaide.edu.au

Quelle: Journal of Applied Physics. 10/21/2025, Vol. 138 Issue 15, p1-5. 5p.

Schlagwörter: *NONVOLATILE memory, *HETEROSTRUCTURES, *PASSIVATION, *ELECTRON density, *QUANTUM states

Leveraging high fluence and low pressure for pulsed laser deposition of high-mobility γ-Al2O3/SrTiO3 heterostructure growth.

Autoren: Hvid-Olsen, Thor Hoegfeldt, Christina Chanda, Amit et al.

Quelle: Journal of Applied Physics. 9/28/2025, Vol. 138 Issue 12, p1-8. 8p.

Schlagwörter: *HETEROSTRUCTURES, *OXIDES, *TWO-dimensional electron gas, *ELECTRON mobility, *ELECTRICAL conductors

Adjustable spin-dependent perfect absorption via topological edge state in a heterostructure with the multi-Weyl semimetal.

Autoren: Wu, Jipeng Zeng, Xirui Liao, Yulei et al.

Quelle: Journal of Applied Physics. 9/21/2025, Vol. 138 Issue 11, p1-9. 9p.

Schlagwörter: *ABSORPTION, *HETEROSTRUCTURES, *SEMIMETALS, *METALS, *HETEROJUNCTIONS

Mechanisms for oxygen vacancy defect migration in SrTiO3/NiO heterostructures: Effect of interface layer chemistry and misfit dislocation structure.

Autoren: More, Anish Ebmeyer, William Dholabhai, Pratik P.

Quelle: Journal of Applied Physics. 9/7/2025, Vol. 138 Issue 9, p1-21. 21p.

Schlagwörter: *HETEROSTRUCTURES, *PEROVSKITE, *OXIDES, *FUEL cell electrolytes, *OXYGEN

Understanding the intercalation and rectification effects in gold supported graphene/PtSe2  heterostructure.

Autoren: Miwa, Roberto H. Kuritza, Danilo P. Padilha, José E. et al.

Quelle: Journal of Applied Physics. 9/7/2025, Vol. 138 Issue 9, p1-6. 6p.

Schlagwörter: *GRAPHENE, *HETEROSTRUCTURES, *GOLD, *RECTIFICATION (Electricity), *INTERCALATION reactions

Structural and interface band alignment investigations on epitaxial β-Ga2O3/α-GaCrO3 type-II transparent heterojunction.

Autoren: Sharma, Rishav Singh, Prabhat Kumar Baraik, Kiran et al.

Quelle: Journal of Applied Physics. 8/14/2025, Vol. 138 Issue 6, p1-10. 10p.

Schlagwörter: *GALLIUM compounds, *HETEROSTRUCTURES, *NICKEL alloys, *MAGNETRON sputtering, *SINGLE crystals, *EPITAXY, *THIN films, *OPTICAL measurements

Influence of inter-layer interactions in transition metal dichalcogenides MX2 (M = Mo/W, X = S/Se) heterobilayers.

Autoren: Beniwal, Ravina Maroju, Suman Kalyan Leconte, Nicolas et al.

Quelle: Journal of Applied Physics. 7/21/2025, Vol. 138 Issue 3, p1-12. 12p.

Schlagwörter: *TRANSITION metal chalcogenides, *HETEROSTRUCTURES, *STRAINS & stresses (Mechanics), *EXCITON theory, *OPTICAL properties, *STACKING interactions, *ELECTRONIC materials, *BAND gaps

Sputtered ferroelectric aluminum scandium boron nitride (Al1−x−yBxScyN)/n-GaN heterostructures.

Autoren: Skidmore, Chloe Nordlander, Josh Hayden, John et al.

Quelle: Journal of Applied Physics. 7/7/2025, Vol. 138 Issue 1, p1-9. 9p.

Schlagwörter: *FERROELECTRIC materials, *HETEROSTRUCTURES, *FERROELECTRIC crystals, *HYSTERESIS, *STRAINS & stresses (Mechanics), *SPUTTERING (Physics), *GALLIUM nitride

Effective polysulfides regulation in high-performance Li-S batteries via novel VO2-VS2 heterostructure

Autoren: Hou, Yao-Lin Zhang, Yu-Qing Li, Dan et al.

Quelle: Rare Metals. 44:3772-3783

Schlagwörter: Li-S battery, Shuttle effect, Heterostructures, Polysulfides, VO2-VS2

Dateibeschreibung: electronic

Zugangs-URL: https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-566841
https://doi.org/10.1007/s12598-024-03137-2

Computational Assessment of I-V Curves and Tunability of 2D Semiconductor van der Waals Heterostructures

Autoren: Liang, Qiuhua Lara Avila, Samuel Kubatkin, Sergey et al.

Quelle: 2D material-baserad teknologi för industriella applikationer (2D-TECH) Kvantmekanisk Beskrivning av Fullständiga Halvledaranordning Nano Letters. 25(5):2052-2058

Schlagwörter: Tunnel Field-Effect Transistors (TFETs), Non-Equilibrium Green Function (NEGF), Density Functional Theory (DFT) Calculations, Transition Metal Dichalcogenide (TMD) Heterostructures, Electronic Transport Property

Dateibeschreibung: electronic

Zugangs-URL: https://research.chalmers.se/publication/544989
https://research.chalmers.se/publication/544989/file/544989_Fulltext.pdf

Photoconverters based on GaAs-ZnSe heterostructures.

Autoren: Muratov, Abat Uteniyazov, Abat Srajatdinova, Fatima

Quelle: AIP Conference Proceedings. 2025, Vol. 3331 Issue 1, p1-4. 4p.

Schlagwörter: *HETEROSTRUCTURES, *ELECTROMOTIVE force, *SEMICONDUCTOR thin films, *SOLAR cells, *SEMICONDUCTOR switches, *PHOTOVOLTAIC effect

Chern number-bandgap tunable quantum anomalous Hall effect in two-dimensional 1T-LaN2.

Autoren: Rahangiar, Finantius E. M. Hasdeo, Eddwi H. Darwis Umar, Muhammad et al.

Quelle: Journal of Applied Physics; 11/21/2025, Vol. 138 Issue 19, p1-12, 12p

Schlagwörter: HALL effect, BAND gaps, MAGNETIZATION, HETEROSTRUCTURES, SPINTRONICS

Scanning spreading resistance microscopy for p–n junction and carrier distribution analysis in InGaAs/AlGaAs quantum well laser heterostructure.

Autoren: Sviridov, D. E. Butaev, M. R. Andreev, A. Yu. et al.

Quelle: Journal of Applied Physics; 11/14/2025, Vol. 138 Issue 18, p1-6, 6p

Schlagwörter: ALUMINUM gallium arsenide lasers, P-N junctions (Semiconductors), QUANTUM well lasers, HETEROSTRUCTURES, SECONDARY ion mass spectrometry

Band structure engineering and interfacial charge modulation in ReS2/1T′-MoS2 and ReS2/1T′-WS2 heterostructures for tunable hydrogen adsorption.

Autoren: Jose, Ashita Meenakshisundaram, N. Latha, K. V. P.

Quelle: Journal of Applied Physics; 11/14/2025, Vol. 138 Issue 18, p1-11, 11p

Schlagwörter: ELECTRONIC band structure, RHENIUM compounds, HETEROSTRUCTURES, HYDROGEN absorption & adsorption, SPIN-orbit interactions, HYDROGEN evolution reactions

Electronic transport properties and stability of 2D electron gases on Si3N4/AlOx//KTaO3 heterostructures.

Autoren: Silva Jr., R. S. Merodio, A. M. Martínez, E. A. et al.

Quelle: Journal of Applied Physics; 10/28/2025, Vol. 138 Issue 16, p1-7, 7p

Schlagwörter: TWO-dimensional electron gas, ELECTRON transport, SILICON nitride, HETEROSTRUCTURES, LOW temperatures

Electrical conductance at Ga2O3/Si interfaces fabricated via surface activated bonding.

Autoren: Matsumae, Takashi Kurashima, Yuichi Nemoto, Ryoichi et al.

Quelle: Journal of Applied Physics; 10/14/2025, Vol. 138 Issue 14, p1-6, 6p

Schlagwörter: ELECTRIC conductivity, GALLIUM compounds, SILICON, SPUTTERING (Physics), HETEROSTRUCTURES

Magnetization-controlled terahertz harmonic generation with grating and cavity structures.

Autoren: Koyun, Hatice Nur Salikhov, Ruslan Fowley, Ciaran et al.

Quelle: Journal of Applied Physics; 10/14/2025, Vol. 138 Issue 14, p1-12, 12p

Schlagwörter: MAGNETIZATION, HARMONIC generation, SPINTRONICS, HETEROSTRUCTURES, MAGNETIC memory (Computers)

Auger recombination rates in narrow gap HgTe quantum wells.

Autoren: Aleshkin, V. Ya. Dubinov, A. A. Rumyantsev, V. V.

Quelle: Journal of Applied Physics; 10/7/2025, Vol. 138 Issue 13, p1-10, 10p

Schlagwörter: ELECTRON-hole recombination, QUANTUM wells, HETEROSTRUCTURES, IMPACT ionization, ELECTRON-electron interactions

Interfacial charge transfer and oxygen activation in phosphorus-doped g-C3N4/MoS2 quantum dot heterostructures: A first-principles and photocatalytic study.

Autoren: Yu, Tianzhu Yan, Zhaoxiong Li, Changle et al.

Quelle: Journal of Chemical Physics; 10/7/2025, Vol. 163 Issue 13, p1-17, 17p

Schlagwörter: CHARGE transfer, OXYGEN, PHOSPHORUS, QUANTUM dots, HETEROSTRUCTURES, PHOTOCATALYSIS

Theoretical study of a high-performance 2D WS2/Bi2Se3 van der Waals heterostructure for solar cell application.

Autoren: Patel, Aparnakumari M. Patel, Abhishek Thakor, Pankajsinh et al.

Quelle: International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics. 12/10/2025, Vol. 39 Issue 29/30, p1-8. 8p.

Schlagwörter: *SOLAR cells, *HETEROSTRUCTURES, *TWO-dimensional materials (Nanotechnology), *OPTICAL properties, *SULFIDES, *ABSORPTION, *ELECTRIC properties, *BISMUTH selenide