Suchergebnisse - "Ghezellou, Misagh"

Author Correction: Spectral stability of V2 centres in sub-micron 4H-SiC membranes

Autoren: Heiler, Jonah Körber, Jonathan Hesselmeier, Erik et al.

Quelle: npj Quantum Materials ; volume 9, issue 1 ; ISSN 2397-4648

Verfügbarkeit: https://doi.org/10.1038/s41535-024-00649-z
https://www.nature.com/articles/s41535-024-00649-z.pdf
https://www.nature.com/articles/s41535-024-00649-z

Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Perot microcavity

Autoren: Hessenauer, Jannis Koerber, Jonathan Ghezellou, Misagh et al.

Quelle: OPTICA QUANTUM. 3(2):175-181

Dateibeschreibung: electronic

Zugangs-URL: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-216875
https://doi.org/10.1364/OPTICAQ.557206

Single V2 defect in 4H silicon carbide Schottky diode at low temperature.

Autoren: Steidl, Timo Kuna, Pierre Hesselmeier-Hüttmann, Erik et al.

Quelle: Nature Communications; 5/20/2025, Vol. 16 Issue 1, p1-7, 7p

Schlagwörter: SCHOTTKY barrier diodes, QUANTUM theory, PHYSICAL sciences, OPTICAL control, OPTICAL devices

Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide

Autoren: Cilibrizzi, Pasquale Arshad, Muhammad Junaid Tissot, Benedikt et al.

Quelle: Nature Communications. 14(1)

Dateibeschreibung: electronic

Zugangs-URL: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-200521
https://doi.org/10.1038/s41467-023-43923-7

Spectral stability of V2 centres in sub-micron 4H-SiC membranes.

Autoren: Heiler, Jonah Körber, Jonathan Hesselmeier, Erik et al.

Quelle: NPJ Quantum Materials; 4/4/2024, Vol. 9 Issue 1, p1-8, 8p

Schlagwörter: SILICON carbide, OPTICAL limiting, SEMICONDUCTOR technology, SILICON nanowires

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD.

Autoren: Gogova, Daniela Ghezellou, Misagh Tran, Dat Q. et al.

Quelle: AIP Advances; May2022, Vol. 12 Issue 5, p1-7, 7p

Schlagwörter: EPITAXY, WIDE gap semiconductors, SCANNING transmission electron microscopy, EPITAXIAL layers, METAL organic chemical vapor deposition, SAPPHIRES

Broadband single-mode planar waveguides in monolithic 4H-SiC.

Autoren: Bosma, Tom Hendriks, Joop Ghezellou, Misagh et al.

Quelle: Journal of Applied Physics; 1/14/2022, Vol. 131 Issue 2, p1-9, 9p

Schlagwörter: PIN diodes, OPTICAL control, CARRIER density, PLANAR waveguides, INTEGRATED optics, RADIO control

The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers.

Autoren: Ghezellou, Misagh Kumar, Piyush Bathen, Marianne E. et al.

Quelle: APL Materials; Mar2023, Vol. 11 Issue 3, p1-10, 10p

Schlagwörter: CHARGE carrier lifetime, EPITAXIAL layers, CHARGE carrier mobility, CHARGE carriers, DEEP level transient spectroscopy

Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H‐SiC Epitaxial Layers.

Autoren: Ghezellou, Misagh Ul‐Hassan, Jawad

Quelle: Physica Status Solidi (B); Apr2024, Vol. 261 Issue 4, p1-13, 13p

Schlagwörter: CHEMICAL vapor deposition, SURFACE defects, EPITAXY, QUANTUM electronics, HYDROCARBONS, MOLECULAR beam epitaxy, EPITAXIAL layers

The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers.

Autoren: Karhu, Robin Ghezellou, Misagh Ul Hassan, Jawad

Quelle: Physica Status Solidi (B); Apr2022, Vol. 259 Issue 4, p1-6, 6p

Schlagwörter: SCREW dislocations, SURFACE preparation, SURFACE defects, X-ray topography, HIGH temperatures, HAMBURGERS

Narrow inhomogeneous distribution of spin-active emitters in silicon carbide.

Autoren: Nagy, Roland Dasari, Durga Bhaktavatsala Rao Babin, Charles et al.

Quelle: Applied Physics Letters; 2021, Vol. 118 Issue 14, p1-7, 7p

Schlagwörter: OPTICAL interference, QUANTUM computing, LIGHT absorption, SILICON carbide, SCALABILITY, PHOTONS

Influence of Carbon Cap on Self-Diffusion in Silicon Carbide.

Autoren: Bathen, Marianne Etzelmüller Linnarsson, Margareta Ghezellou, Misagh et al.

Quelle: Crystals (2073-4352); Sep2020, Vol. 10 Issue 9, p752, 1p

Schlagwörter: SILICON carbide, SECONDARY ion mass spectrometry, EPITAXIAL layers