Výsledky vyhľadávania - "GALLIUM arsenide"

Defect-specific compensation and redistribution of Si in GaAs:Si structures resolved at subnanometer scale.

Autori: Rejmer, Adrianna Ozcan-Atar, Ayse Kołkowski, Walery a ďalší

Zdroj: Journal of Applied Physics. 11/28/2025, Vol. 138 Issue 20, p1-21. 21p.

Predmety: *SILICON, *GALLIUM arsenide, *CRYSTAL structure, *EPITAXY, *ELECTRIC capacity

Scanning spreading resistance microscopy for p–n junction and carrier distribution analysis in InGaAs/AlGaAs quantum well laser heterostructure.

Autori: Sviridov, D. E. Butaev, M. R. Andreev, A. Yu. a ďalší

Zdroj: Journal of Applied Physics. 11/14/2025, Vol. 138 Issue 18, p1-6. 6p.

Predmety: *ALUMINUM gallium arsenide lasers, *P-N junctions (Semiconductors), *QUANTUM well lasers, *HETEROSTRUCTURES, *SECONDARY ion mass spectrometry

Quasi-open circuit response times of single- and multi-junction InGaAs photonic power converters.

Autori: Almora, Osbel Walker, Alexandre W. Wilson, D. Paige a ďalší

Zdroj: Journal of Applied Physics. 11/14/2025, Vol. 138 Issue 18, p1-9. 9p.

Predmety: *INDIUM gallium arsenide, *ELECTROMAGNETIC interference, *MONOCHROMATIC light, *CASCADE converters, *OPEN-circuit voltage

Influence of the GaAs substrate thickness on the photoluminescence of an InP/AlGaInP quantum dot membrane.

Autori: Ćutuk, A. Jetter, M. Michler, P.

Zdroj: Journal of Applied Physics. 10/14/2025, Vol. 138 Issue 14, p1-6. 6p.

Predmety: *GALLIUM arsenide, *SUBSTRATES (Materials science), *THICKNESS measurement, *PHOTOLUMINESCENCE, *QUANTUM dots, *SEMICONDUCTORS

Spatially resolved photoresponse in both lateral and vertical directions of InGaAs photodetector.

Autori: Huang, Zhengdong Meng, Jiayu Yuan, Youneng a ďalší

Zdroj: Journal of Applied Physics. 9/21/2025, Vol. 138 Issue 11, p1-6. 6p.

Predmety: *PHOTODETECTORS, *INDIUM gallium arsenide, *LIGHT absorption, *LASER beams, *PHOTOELECTRIC devices

Experimental and theoretical investigation of nonradiative broadening excitation spectra of GaAs/AlGaAs quantum wells under magnetic field in Faraday geometry.

Autori: Grigoryev, P. S. Chukeev, M. A. Lovtcius, V. A. a ďalší

Zdroj: Journal of Applied Physics. 9/14/2025, Vol. 138 Issue 10, p1-14. 14p.

Predmety: *EXCITATION spectrum, *GALLIUM arsenide, *QUANTUM wells, *MAGNETIC fields, *QUANTIZATION (Physics)

Terahertz excitation spectroscopy of Bi/GaAs heterostructures.

Autori: Pačebutas, Vaidas Norkus, Ričardas Tamulaitis, Gintautas a ďalší

Zdroj: Journal of Applied Physics. 8/28/2025, Vol. 138 Issue 8, p1-7. 7p.

Predmety: *TERAHERTZ materials, *GALLIUM arsenide, *BISMUTH alloys, *HETEROSTRUCTURES, *FEMTOSECOND pulses, *ELECTRON energy band gaps

Manipulation of pulse propagation via tunable electromagnetically induced transparency in a (In,Ga)As/GaAs quantum dot system.

Autori: Idrees, Muhammad Badshah, Fazal Khan, Zareen A.

Zdroj: Journal of Applied Physics. 8/28/2025, Vol. 138 Issue 8, p1-8. 8p.

Predmety: *GALLIUM arsenide, *QUANTUM dots, *ELECTROMAGNETISM, *QUANTUM coherence, *ABSORPTION, *QUANTUM information science

Review of radiation-induced defects in GaAs.

Autori: Liu, X.-Y. Singh, C. N. Kennedy, E. R. a ďalší

Zdroj: Journal of Applied Physics. 8/21/2025, Vol. 138 Issue 7, p1-20. 20p.

Predmety: *GALLIUM arsenide, *IRRADIATION, *SEMICONDUCTORS, *OPTOELECTRONIC devices, *DENSITY functional theory, *CHARGE carriers

Study of In0.53Ga0.47As/InP interface in III–V heterostructures by coupling monoatomic argon sputtering and high-energy x-ray photoelectron spectroscopy.

Autori: Tsamo Tagougue, G. Martinez, E. Veillerot, M. a ďalší

Zdroj: Journal of Applied Physics. 7/14/2025, Vol. 138 Issue 2, p1-11. 11p.

Predmety: *INDIUM gallium arsenide, *INDIUM phosphide, *X-ray photoelectron spectroscopy, *SECONDARY ion mass spectrometry, *SPUTTER deposition, *ANALYTICAL chemistry techniques, *HETEROSTRUCTURES, *PHYSICAL & theoretical chemistry

Charge carrier extraction and recombination effects in GaInAs/GaAsP multi-quantum well solar cells.

Autori: Ahmed, Hasan Sudhakaran, Sethulakshmi J. Almutairi, Amani S. a ďalší

Zdroj: Journal of Applied Physics. 7/7/2025, Vol. 138 Issue 1, p1-9. 9p.

Predmety: *SOLAR cells, *INDIUM gallium arsenide, *QUANTUM wells, *PHOTOLUMINESCENCE, *RECOMBINATION (Chemistry), *GALLIUM phosphide, *CHARGE carrier mobility, *TRANSPORT theory

High conductivity transparent n-InAlAs contact layers by InGaAs inserts.

Autori: Gilinsky, A. M. Dmitriev, D. V. Toropov, A. I. a ďalší

Zdroj: Journal of Applied Physics. 5/7/2025, Vol. 137 Issue 17, p1-6. 6p.

Predmety: *INDIUM gallium arsenide, *SURFACE morphology, *PHOTODIODES, *EPITAXY, *DIODES

A 1 kV sub-nanosecond electrical pulse generated by a linear GaAs photoconductive semiconductor switch and its characterization.

Autori: Wang, Hongqi Shi, Wei Ma, Cheng a ďalší

Zdroj: Journal of Applied Physics. 1/14/2025, Vol. 137 Issue 2, p1-10. 10p.

Predmety: *GALLIUM arsenide semiconductors, *INERTIAL confinement fusion, *PULSED lasers, *GALLIUM arsenide, *ELECTRIC fields, *LASER pulses

Design of a solid-state gaas power amplifier for L-band applications.

Autori: Hussain, Banen Ali Reja, Ahmed Hameed Jaddoa, Ameer A.

Zdroj: AIP Conference Proceedings. 2025, Vol. 3350 Issue 1, p1-11. 11p.

Predmety: *GALLIUM arsenide transistors, *POWER amplifiers, *POWER (Mechanics), *IMPEDANCE matching, *BROADBAND amplifiers, *WAVE amplification

The role of small-angle electron–electron scattering in transverse magnetic focusing experiment.

Autori: Egorov, Dmitry A. Pokhabov, Dmitriy A. Zhdanov, Evgeny Yu. a ďalší

Zdroj: Journal of Applied Physics; 9/21/2025, Vol. 138 Issue 11, p1-7, 7p

Predmety: ELECTRON-electron interactions, SCATTERING (Physics), HETEROSTRUCTURES, GALLIUM arsenide, ALUMINUM gallium arsenide lasers

Geometrical Tailoring of Shockley–Ramo Bipolar Photocurrent in Self‐Powered GaAs Nanodevices.

Autori: Fang, Xiaoguo Xue, Huanyi Mao, Xuhui a ďalší

Zdroj: Advanced Optical Materials. 11/25/2025, Vol. 13 Issue 33, p1-9. 9p.

Predmety: *GALLIUM arsenide semiconductors, *PHOTOCURRENTS, *OPTICAL computing, *NANOTECHNOLOGY, *CHARGE carrier mobility

Influence of heterovalent doping on tetrahedral N interstitial formation in dilute GaAsN alloys.

Autori: Cooper, J. J. P. Carcassi, M. C. Xi, Z. a ďalší

Zdroj: Applied Physics Letters. 11/17/2025, Vol. 127 Issue 20, p1-6. 6p.

Predmety: *GALLIUM arsenide, *OPTOELECTRONIC devices, *FERMI level, *DOPING agents (Chemistry), *ABSORPTION

N‐Heterocyclic Carbenes on a III‐V Semiconductor: From Chain Formation to Ordered Monolayers.

Autori: Franz, Martin Das, Ankita Chandola, Sandhya a ďalší

Zdroj: Angewandte Chemie International Edition. 11/10/2025, Vol. 64 Issue 46, p1-10. 10p.

Predmety: *GALLIUM arsenide, *CARBENES, *SCANNING tunneling microscopy, *CHEMICAL affinity, *SURFACE preparation, *ELECTRONIC materials, *MONOMOLECULAR films

Optimal growth conditions for strained GaAs/InxAl1−xAs core–shell nanowires with enhanced electronic properties.

Autori: Sun, Xiaoxiao Pashkin, Alexej Hübner, René a ďalší

Zdroj: Applied Physics Letters. 11/3/2025, Vol. 127 Issue 18, p1-7. 7p.

Predmety: *NANOWIRES, *GALLIUM arsenide, *ELECTRON mobility, *EPITAXY, *LOW temperatures

GaAs Nanowire Growth by MBE with Catalyst Forming Eutectic Points with Both Elements.

Autori: Sibirev, Nickolay V. Soshnikov, Ilya P. Ilkiv, Igor V. a ďalší

Zdroj: Nanomaterials (2079-4991). Nov2025, Vol. 15 Issue 21, p1664. 13p.

Predmety: *GALLIUM arsenide, *CATALYSTS, *EUTECTIC alloys, *NANOWIRE devices, *EPITAXY, *DOPING agents (Chemistry), *HETEROSTRUCTURES