Výsledky vyhledávání - "Field-effect Transistors"

Thermal performance enhancement of complementary field-effect transistors via comparative analysis of power delivery structures.

Autoři: Kim, Johyeon Kim, Seung Kyu Cho, Hyun Bo a další

Zdroj: Journal of Applied Physics. 10/14/2025, Vol. 138 Issue 14, p1-18. 18p.

Témata: *THERMAL properties, *FIELD-effect transistors, *COMPLEMENTARY metal oxide semiconductors, *THERMAL conductivity, *ELECTRIC properties

An analytical physics-based model for low-field mobility in nitride high-electron-mobility transistor considering the momentum relaxation and two-dimensional electronic gas effective mass.

Autoři: Al-Saman, Amgad A. Yang, Xiaoqin Pei, Yi a další

Zdroj: Journal of Applied Physics. 10/14/2025, Vol. 138 Issue 14, p1-12. 12p.

Témata: *MODULATION-doped field-effect transistors, *RELAXATION phenomena, *ELECTRON gas, *ALUMINUM gallium nitride, *SCATTERING (Physics)

Reduction of current collapse in NH3-MBE-grown in situ SiN/AlGaN/AlN/GaN high electron mobility transistors on a SiC substrate.

Autoři: Mansurov, V. G. Malin, T. V. Milakhin, D. S. a další

Zdroj: Journal of Applied Physics. 9/28/2025, Vol. 138 Issue 12, p1-15. 15p.

Témata: *MODULATION-doped field-effect transistors, *NITRIDES, *HETEROSTRUCTURES, *ELECTRIC potential, *VOLTAGE regulators

Coupled mode effects in the stationary and transient behavior of squeezed channel field-effect transistors.

Autoři: Pech, M. Schulz, D.

Zdroj: Journal of Applied Physics. 9/28/2025, Vol. 138 Issue 12, p1-14. 14p.

Témata: *FIELD-effect transistors, *CHARGE carriers, *GREEN'S functions, *DENSITY matrices, *HAMILTON'S equations, *HEISENBERG model

In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition.

Autoři: Shimada, Akihiro Shiomi, Haruna Tohei, Tetsuya a další

Zdroj: Journal of Applied Physics. 8/21/2025, Vol. 138 Issue 7, p1-8. 8p.

Témata: *ALUMINUM gallium nitride, *MODULATION-doped field-effect transistors, *X-ray diffraction, *METAL oxide semiconductors, *PIEZOELECTRICITY, *THERMAL expansion

Ferroelectric nanosheet FET with surrounded gate for mitigating dead zone and implementing reconfigurable logic-in-memory circuit.

Autoři: Cheng, Tian-Tong Wang, Feng Li, Jia-Cheng a další

Zdroj: Journal of Applied Physics. 7/28/2025, Vol. 138 Issue 4, p1-8. 8p.

Témata: *FIELD-effect transistors, *NANOSTRUCTURED materials, *FERROELECTRIC crystals

The impact of interface traps on the subthreshold characteristics of III–V vertical nanowire tunnel field-effect transistors.

Autoři: Chang, Chengdong Shao, Yanjie Zhang, Yi a další

Zdroj: Journal of Applied Physics. 4/7/2025, Vol. 137 Issue 13, p1-6. 6p.

Témata: *TUNNEL field-effect transistors, *FIELD-effect transistors, *NANOWIRES, *TUNNEL design & construction, *METAL oxide semiconductor field-effect transistors

Unveiling negative capacitance in ferroelectric heterostructures: A 3D energy landscape perspective.

Autoři: Li, Bo Zhang, Xingwang Zhu, Dianchen a další

Zdroj: Journal of Applied Physics. 6/14/2025, Vol. 137 Issue 22, p1-8. 8p.

Témata: *FIELD-effect transistors, *THERMODYNAMIC equilibrium, *ELECTRIC capacity, *DIELECTRICS, *HETEROSTRUCTURES

Multi-objective optimization of performance metrics of all-metallic vacuum field effect transistors.

Autoři: Hernandez, Nathaniel Cahay, Marc O'Mara, Jonathan a další

Zdroj: Journal of Applied Physics. 6/7/2025, Vol. 137 Issue 21, p1-10. 10p.

Témata: *FIELD-effect transistors, *MULTI-objective optimization, *FIELD emission, *STRAY currents, *NANOELECTROMECHANICAL systems

Spin-polarized current in field-effect transistors made of magnetic polymers.

Autoři: Sun, Shih-Jye Menšík, Miroslav Toman, Petr

Zdroj: Journal of Applied Physics. 5/28/2025, Vol. 137 Issue 20, p1-17. 17p.

Témata: *MAGNETIC coupling, *FIELD-effect transistors, *SPIN polarization, *FERMI energy, *VOLTAGE, *SPIN-polarized currents

A method to generate additional volatile states using single-domain ferroelectric field-effect transistor.

Autoři: Kumar, Abhishek Mehrotra, Shruti Bulusu, Anand a další

Zdroj: Journal of Applied Physics. 4/7/2025, Vol. 137 Issue 13, p1-7. 7p.

Témata: *FERROELECTRIC thin films, *FIELD-effect transistors, *HYSTERESIS loop, *SILICON

Integration of electrically detected magnetic resonance on a chip (EDMRoC) with charge pumping for low-cost and sensitive defect characterization in silicon carbide metal–oxide–semiconductor field-effect transistors.

Autoři: Lettens, Jan Avramenko, Marina Vandevenne, Ilias a další

Zdroj: Journal of Applied Physics. 2/14/2025, Vol. 137 Issue 6, p1-12. 12p.

Témata: *ELECTRON paramagnetic resonance, *FIELD-effect transistors, *ON-chip charge pumps, *MAGNETIC resonance, *RESONANCE effect, *METAL oxide semiconductor field-effect transistors

Multi-Scale Adaptive Inspection Framework for Voids in MOSFETs.

Autoři: Tang, Huankang Li, Weibin Nie, Jianghua a další

Zdroj: IEEE Transactions on Semiconductor Manufacturing. Nov2025, Vol. 38 Issue 4, p826-839. 14p.

Témata: *ENGINEERING inspection, *RELIABILITY in engineering, METAL oxide semiconductor field-effect transistors, X-ray imaging, THRESHOLDING algorithms, ELECTRONIC equipment, IMAGE processing

High Voltage Design Strategies for Gallium Oxide Power Devices.

Autoři: Edwards, N. L. Martinez, A. Evans, J. a další

Zdroj: IEEE Transactions on Semiconductor Manufacturing. Nov2025, Vol. 38 Issue 4, p758-764. 7p.

Témata: BREAKDOWN voltage, FIELD-effect transistors, DRIFT diffusion models, POWER electronics, HIGH voltages, THRESHOLD voltage, GALLIUM

Thermal analysis of analog and noise parameters of dual material recessed source-drain junctionless gate all around MOSFETs.

Autoři: Kumar, Alok Gupta, Tarun Kumar Pandey, Amit Kumar a další

Zdroj: International Journal of Electronics. Dec2025, Vol. 112 Issue 12, p2728-2748. 21p.

Témata: THERMAL analysis, METAL oxide semiconductor field-effect transistors, ANALOG computers, MEASURING instruments, SEASONAL temperature variations, ANALOG circuits

A novel design of 1-bit full adders for eliminating voltage step in BBL-PT full adder using 32-nm CNTFET technology.

Autoři: Tirumalasetty, Venkata Rao Babulu, K. Naidu, G. Appala

Zdroj: International Journal of Electronics. Nov2025, Vol. 112 Issue 11, p2386-2408. 23p.

Témata: CARBON nanotube field effect transistors, COMPUTER logic

Ultranarrow Semiconductor WS 2 Nanoribbon Field-Effect Transistors

Autoři: Md Hoque, Anamul Poliakov, Aleksandr Munkhbat, Battulga a další

Zdroj: Kvantplasmonik – en teknologi för foton-fotonväxelverkan på kvantnivå vid rumstemperatur 2D Heterostructure Non-volatile Spin Memory Technology (2DSPIN-TECH) Visualisering av stark växelverkan mellan ljus och materia genom NEX-GEN-STEM Tvådimensionell spintronik minnesteknik Graphene Core Project 3 (Graphene Flagship) Topologi och magnetism i nya kvantmaterial Spinntronik med topologiskt kvantmaterial och magnetisk heterostruktur Stark plasmon-exciton koppling för effektiva foton-foton interaktioner 2D material-baserad teknologi för industriella applikationer (2D-TECH) Nano Letters. 25(5):1750-1757

Témata: crystallographically controlled nanostructuring, field-effect transistors, zigzagedges, transition metal dichalcogenides, diodes, 2D semiconductors, TMDs, WS2, nanoribbon

Popis souboru: electronic

Přístupová URL adresa: https://research.chalmers.se/publication/545055
https://research.chalmers.se/publication/545092
https://research.chalmers.se/publication/545092/file/545092_Fulltext.pdf

Computational Assessment of I-V Curves and Tunability of 2D Semiconductor van der Waals Heterostructures

Autoři: Liang, Qiuhua Lara Avila, Samuel Kubatkin, Sergey a další

Zdroj: 2D material-baserad teknologi för industriella applikationer (2D-TECH) Kvantmekanisk Beskrivning av Fullständiga Halvledaranordning Nano Letters. 25(5):2052-2058

Témata: Tunnel Field-Effect Transistors (TFETs), Non-Equilibrium Green Function (NEGF), Density Functional Theory (DFT) Calculations, Transition Metal Dichalcogenide (TMD) Heterostructures, Electronic Transport Property

Popis souboru: electronic

Přístupová URL adresa: https://research.chalmers.se/publication/544989
https://research.chalmers.se/publication/544989/file/544989_Fulltext.pdf

Technological trends in MOSFET for low power applications.

Autoři: Vandana, Beemanpally Patro, Bala Shivlal Das, Jitender Kumar a další

Zdroj: AIP Conference Proceedings. 2025, Vol. 3361 Issue 1, p1-14. 14p.

Témata: *METAL oxide semiconductor field-effect transistors, *ENERGY consumption, *ELECTRIC currents, *TRANSISTORS, *INTERNET of things, *FIELD-effect transistors, *ELECTRONIC systems

Magnesium Metal-Based MOSFET Devices for Biodegradable.

Autoři: Legassey, A. Pappas, N. Drozdenko, B. a další

Zdroj: International Journal of High Speed Electronics & Systems. Mar2026, Vol. 35 Issue 1, p1-8. 8p.

Témata: METAL oxide semiconductor field-effect transistor circuits, FIELD-effect transistors, MAGNESIUM hydroxide, LOGIC circuits, MAGNESIUM, METAL oxide semiconductor field-effect transistors