Search Results - "Electron traps"

Cryogenic Trapping Effects in GaN-HEMTs: Influences of Fe-Doped Buffer and Field Plates

Authors: Mebarki, Mohamed Aniss Castillo, Ragnar Ferrand-Drake Del Meledin, Denis et al.

Source: IEEE Transactions on Electron Devices. 72(8):4042-4048

Subject Terms: Logic gates, MODFETs, HEMTs, Pulse measurements, Iron, Cryogenics, Current measurement, Electron traps, Lighting, Performance evaluation, Cryogenic, field plates (FPs), GaN high electron mobility transistors (HEMTs), iron (Fe), traps

File Description: electronic

Access URL: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-216797
https://doi.org/10.1109/TED.2025.3581541

The halogen vacancy, Tl-activator, and Tl-bound excitons in CsI:Tl scintillator.

Authors: Kang, Byungkyun Biswas, Koushik

Source: Journal of Applied Physics; 10/7/2025, Vol. 138 Issue 13, p1-8, 8p

Subject Terms: SCINTILLATORS, HALOGEN compounds, ELECTRON traps, ELECTRONS, LUMINESCENCE

Degradation mechanisms of Schottky p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress.

Authors: Hu, Fei Pan, Chengbing Zheng, Xinyuan et al.

Source: Chinese Physics B. Nov2025, Vol. 34 Issue 11, p1-5. 5p.

Subject Terms: *ELECTRON traps, *THRESHOLD voltage, *ELECTRIC currents, *CHEMICAL reactions, *SEMICONDUCTOR devices

Anderson's negative-U chemistry in amorphous silicon nitride: A complex system approach.

Authors: Woon Ih Choi Bokyeom Kim Uihui Kwon et al.

Source: Science Advances. 10/24/2025, Vol. 11 Issue 43, p1-10. 10p.

Subject Terms: *ELECTRON-electron interactions, *ELECTRON traps, *DENSITY functional theory, *AMORPHOUS silicon, *ELECTRON configuration

People: ANDERSON, Jonathan, 1984-

Dual role of polyoxometalate compounds as filler in piezoelectric PVDF based nanocomposites: Materials for next generation sensors and energy harvesting.

Authors: Najafi, Y. Rafiee, E.

Source: Ceramics International. Oct2025:Part B, Vol. 51 Issue 25, p46073-46082. 10p.

Subject Terms: *NANOCOMPOSITE materials, *ELECTRON traps, *PIEZOELECTRIC detectors, *HUMAN mechanics, *PIEZOELECTRIC actuators

Hydrogen passivation effects on spatially resolved charge trap densities in Si(100)–SiO2.

Authors: Czarnecki, Adam J. Kolev, Nikola L. See, Patrick et al.

Source: AIP Advances. Oct2025, Vol. 15 Issue 10, p1-6. 6p.

Subject Terms: *ELECTRON traps, *SURFACE passivation, *NANOTECHNOLOGY, *SILICON wafers, *ATOMIC force microscopy

Effect of Tm³⁺ codoping on Ca2Si5N8:Eu²⁺, Tm³⁺ red long-afterglow phosphor.

Authors: Suda, Y. Okuno, T. Kamigaki, Y. et al.

Source: Journal of Applied Physics; 8/28/2025, Vol. 138 Issue 8, p1-11, 11p

Subject Terms: CALCIUM compounds, ELECTRON paramagnetic resonance, THERMOLUMINESCENCE, ELECTRON traps, NUCLEAR magnetic moments, ELECTRON configuration

Multi-step trap-assisted tunneling in Al-doped HfO2 used in advanced 2.5D metal–insulator–metal capacitors.

Authors: Fohn, C. Chery, E. Croes, K. et al.

Source: Journal of Applied Physics; 8/21/2025, Vol. 138 Issue 7, p1-10, 10p

Subject Terms: MIM capacitors, ELECTRONIC equipment, ALUMINUM alloys, ACTIVATION energy, ELECTRON traps, QUANTUM tunneling

Domain formation by e-beam writing on metal-coated −Z cut of lithium niobate.

Authors: Sirotkin, V. V. Kokhanchik, L. S. Emelin, E. V.

Source: Journal of Applied Physics; 8/21/2025, Vol. 138 Issue 7, p1-15, 15p

Subject Terms: LITHIUM niobate, METAL coating, ELECTRON beams, THIN films, ELECTRON traps, SEMICONDUCTOR defects

Generation process of hole traps thermally induced in SiO2/GaOx/p-GaN metal-oxide-semiconductor structures.

Authors: Hara, Masahiro Hirahara, Kenji Tomigahara, Kazuki et al.

Source: Journal of Applied Physics; 8/7/2025, Vol. 138 Issue 5, p1-6, 6p

Subject Terms: GALLIUM nitride, THERMAL oxidation (Materials science), METAL oxide semiconductors, SILICA, GALLIUM, INTERFACE stability, RAPID thermal processing, ELECTRON traps

A modified model for thermodynamics of localized-state luminescence in disordered materials.

Authors: Xue, Zhaoyi Su, Zhicheng Xu, Shijie

Source: Journal of Applied Physics; 7/28/2025, Vol. 138 Issue 4, p1-9, 9p

Subject Terms: THERMODYNAMICS, LUMINESCENCE, SEMICONDUCTORS, ELECTRON traps, ENTROPY, TEMPERATURE effect, ENTHALPY, AMORPHOUS substances

Impact of water absorption on electrical properties of epoxy composite polymers: Suppressed charge trapping and enhanced ion transport.

Authors: Balestra, Luigi Rossetti, Mattia Gnani, Elena et al.

Source: Journal of Applied Physics; 7/14/2025, Vol. 138 Issue 2, p1-13, 13p

Subject Terms: ELECTRIC properties, ION transport (Biology), COMPUTER simulation, ELECTRON traps, PERCOLATION, EPOXY resins, HUMIDITY, STRAY currents

Charge stabilization in corona electrets made of HDPE film due to the formation of deep electron traps during its orientational stretching.

Authors: Pakhotin, V. A. Semenov, S. E.

Source: Journal of Applied Physics. 9/28/2024, Vol. 136 Issue 12, p1-11. 11p.

Subject Terms: *ELECTRON emission, *ELECTRON traps, *ELECTRETS, *STRAINS & stresses (Mechanics), *STIMULATED emission

The effect of surface orientation on band alignment and carrier transfer at WS2/CdS interface: Insight from first-principles calculations.

Authors: Cheng, Kai Wu, Peng Hu, Wenbo et al.

Source: Journal of Applied Physics. 5/28/2024, Vol. 135 Issue 20, p1-8. 8p.

Subject Terms: *BINDING energy, *ELECTRON traps, *ENERGY bands, *CONSTRUCTION slabs, *SUBSTRATES (Materials science), *HETEROSTRUCTURES

Analysis of interface trap induced ledge in β-Ga2O3 based MOS structures using UV-assisted capacitance–voltage measurements.

Authors: Bhat, Aditya K. Kim, Hyun-Seop Mishra, Abhishek et al.

Source: Journal of Applied Physics. 5/21/2024, Vol. 135 Issue 19, p1-9. 9p.

Subject Terms: *ELECTRIC capacity, *ELECTRON traps, *CONDUCTION bands, *SURFACE potential, *DENSITY of states, *ENERGY function, *CAPACITORS

Perspective on electrically active defects in β-Ga2O3 from deep-level transient spectroscopy and first-principles calculations.

Authors: Langørgen, Amanda Vines, Lasse Kalmann Frodason, Ymir

Source: Journal of Applied Physics. 5/21/2024, Vol. 135 Issue 19, p1-19. 19p.

Subject Terms: *SCHOTTKY barrier diodes, *ELECTRON traps, *SEMICONDUCTOR defects, *SPECTROMETRY, *FIELD-effect transistors, *METAL oxide semiconductor field-effect transistors, *DENSITY functional theory, *IMAGING systems in chemistry

Tailored Non‐Fullerene Acceptors for Efficient Electron Trapping and High Photomultiplication in Flexible Organic Photodetectors.

Authors: Li, Shuaiqi Shao, Lin Wang, Yazhong et al.

Source: Advanced Functional Materials. 9/11/2025, Vol. 35 Issue 37, p1-10. 10p.

Subject Terms: *ELECTRON traps, *QUANTUM efficiency, *OPTICAL sensors, *PHOTOMULTIPLIERS, *OPTICAL communications, *ELECTRON affinity, *ELECTROPHILES

Effect of vanadium doping on carrier transport dynamics in silicon carbide.

Authors: Chen, Chi Chen, Guoshuai Cheng, Chuanhui et al.

Source: Journal of Physics D: Applied Physics. 8/11/2025, Vol. 58 Issue 32, p1-12. 12p.

Subject Terms: *SILICON carbide, *ELECTRON traps, *DIELECTRIC strength, *ELECTRIC conductivity, *POWER electronics, *CHARGE carrier mobility, *VANADIUM alloys, *SEMICONDUCTOR doping

Study of Ti/TiO2/Ti selector for the memristive crossbar array.

Authors: Samsonova, A. Sukhomlin, D. Klimenko, O. et al.

Source: Journal of Applied Physics; 6/14/2025, Vol. 137 Issue 22, p1-7, 7p

Subject Terms: OXYGEN vacancy, MAGNETRON sputtering, TITANIUM dioxide, ELECTRON traps, LOW voltage systems

Response to “Misinterpreted Anomalous Electron Doping in CdS via Ag Substitution for Cd”.

Authors: Cao, Zixiu Shao, Bin Zhang, Yi

Source: Advanced Functional Materials. Oct2025, p1. 3p. 1 Illustration.

Subject Terms: *CADMIUM sulfide, *ELECTRON traps, *CADMIUM, *ELECTRIC properties, *DOPING agents (Chemistry), *CONDUCTION electrons