Suchergebnisse - "ELLIPSOMETRY"

Measurement of stresses and critical thickness of MBE-grown (013)HgTe layer by nonlinear diagnostic methods.

Autoren: Stupak, M. F. Dvoretsky, S. A. Mikhailov, N. N. et al.

Quelle: Journal of Applied Physics. 11/21/2025, Vol. 138 Issue 19, p1-10. 10p.

Schlagwörter: *MOLECULAR beam epitaxy, *ELLIPSOMETRY, *SECOND harmonic generation, *STRESS relaxation (Mechanics), *RESIDUAL stresses

Electronic localization on the structural inhomogeneities formed due to Bi and Te deficiency in the MBE grown films of AF topological insulator MnBi2Te4: Evidence from spectroscopic ellipsometry and infrared studies.

Autoren: Kovaleva, N. N. Chvostova, D. Fursova, T. N. et al.

Quelle: Journal of Chemical Physics. 11/21/2025, Vol. 163 Issue 19, p1-10. 10p.

Schlagwörter: *ELLIPSOMETRY, *DOPING agents (Chemistry), *SURFACE roughness, *TOPOLOGICAL insulators, *TRANSMITTANCE (Physics), *CHARGE carriers

Transient dielectric function and carrier related processes in doped cubic GaN determined by femtosecond pump–probe spectroscopic ellipsometry.

Autoren: Baron, Elias Goldhahn, Rüdiger Espinoza, Shirly et al.

Quelle: Journal of Applied Physics. 9/28/2025, Vol. 138 Issue 12, p1-7. 7p.

Schlagwörter: *ELLIPSOMETRY, *DIELECTRICS, *LASER pulses, *ELECTRONS, *ENERGY level densities

Artificial neural network assisted spectroscopic ellipsometry data analysis of hydrogenated amorphous silicon thin films.

Autoren: Bordovalos, Alexander Kanneboina, Venkanna Dulal, Prabin et al.

Quelle: Journal of Applied Physics. 9/7/2025, Vol. 138 Issue 9, p1-13. 13p.

Schlagwörter: *ARTIFICIAL neural networks, *ELLIPSOMETRY, *THIN films, *SOLID state electronics, *SILICON films

Spectroscopic ellipsometry measurement and analysis of the optical constants of InAs/InAsSb and InGaAs/InAsSb superlattices and their bulk constituents.

Autoren: Milosavljevic, Marko S. Carrasco, Rigo A. Newell, Alexander T. et al.

Quelle: Journal of Applied Physics. 9/7/2025, Vol. 138 Issue 9, p1-20. 20p.

Schlagwörter: *OPTICAL constants, *ELLIPSOMETRY, *INDIUM arsenide, *SUPERLATTICES, *METALLIC superlattices

Band-filling and relaxation effects in the transient dielectric function of Ge.

Autoren: Armenta, C. A. Zahradník, M. Rebarz, M. et al.

Quelle: Journal of Applied Physics; 11/28/2025, Vol. 138 Issue 20, p1-13, 13p

Schlagwörter: PERMITTIVITY, GERMANIUM, RELAXATION phenomena, CARRIER density, ELLIPSOMETRY

Electronic localization on the structural inhomogeneities formed due to Bi and Te deficiency in the MBE grown films of AF topological insulator MnBi2Te4: Evidence from spectroscopic ellipsometry and infrared studies.

Autoren: Kovaleva, N. N. Chvostova, D. Fursova, T. N. et al.

Quelle: Journal of Chemical Physics; 11/21/2025, Vol. 163 Issue 19, p1-10, 10p

Schlagwörter: ELLIPSOMETRY, DOPING agents (Chemistry), SURFACE roughness, TOPOLOGICAL insulators, TRANSMITTANCE (Physics), CHARGE carriers

Highly accurate classification of material types from spectroscopic ellipsometry heatmap measurements using deep learning.

Autoren: Hayashi, Masahiro Hilfiker, James N. Maekawa, Takuji et al.

Quelle: Applied Physics Letters. 11/3/2025, Vol. 127 Issue 18, p1-6. 6p.

Schlagwörter: *ELLIPSOMETRY, *DEEP learning, *ARTIFICIAL intelligence, *PERMITTIVITY, *ACCURACY

Physics‐Enhanced Learning for Automated Determination of Material Optical Constants.

Autoren: Liu, Shuo Chen, Xiuguo Liu, Shiyuan

Quelle: Laser & Photonics Reviews. 10/7/2025, Vol. 19 Issue 19, p1-11. 11p.

Schlagwörter: *OPTICAL constants, *ELLIPSOMETRY, *KRAMERS-Kronig relations, *THIN films analysis, *PHYSICS, *THIN films, *DEEP learning

High kinetic stability and high density of Ir(ppy)3 doped organic semiconductor glasses.

Autoren: Lee, Yejung Cheng, Shinian Yu, Lian et al.

Quelle: Journal of Chemical Physics; 9/28/2025, Vol. 163 Issue 12, p1-9, 9p

Schlagwörter: CHALCOGENIDE glass, PHYSICAL vapor deposition, ORGANIC semiconductors, ORGANIC light emitting diodes, ELLIPSOMETRY

Advanced optical characterization of multilayer lead zirconate titanate films: A spectroscopic ellipsometry approach.

Autoren: Chen, Li Li, Qiuliang Li, Jingmin et al.

Quelle: Journal of Applied Physics; 9/7/2025, Vol. 138 Issue 9, p1-11, 11p

Schlagwörter: LEAD zirconate titanate films, OPTICAL properties, ELLIPSOMETRY, DIELECTRIC measurements, REFRACTIVE index

Mid-infrared ellipsometry enhanced by means of localized electromagnetic states of a one-dimensional photonic crystal.

Autoren: Occhicone, Agostino Pea, Marialilia Polito, Raffaella et al.

Quelle: Scientific Reports. 8/30/2025, Vol. 15 Issue 1, p1-11. 11p.

Schlagwörter: *ELLIPSOMETRY, *PHOTONIC crystals, *SPECTRUM analysis, *MID-infrared lasers, *DETECTORS, *THIN films, *BLOCH'S theorem

Multimethod Electrical Characterization of Thin Indium Tin Oxide Films: Structuring and Calibration Sample Development for Scanning Probe Microscopy.

Autoren: Hülagü, Deniz Ermilova, Elena Weise, Matthias et al.

Quelle: Physica Status Solidi. A: Applications & Materials Science. Jul2025, Vol. 222 Issue 14, p1-18. 18p.

Schlagwörter: *INDIUM tin oxide, *ELLIPSOMETRY, *THIN films, *OPTOELECTRONICS, *SCANNING probe microscopy, *PERMITTIVITY, *SURFACE resistance

On the selection of Morris trajectories for parametric sensitivity analysis in spectroscopic ellipsometry modeling.

Autoren: Likhachev, D. V.¹ (AUTHOR) dmitriy.likhachev@globalfoundries.com

Quelle: Journal of Applied Physics. 11/14/2023, Vol. 134 Issue 18, p1-15. 15p.

Schlagwörter: *ELLIPSOMETRY, *SENSITIVITY analysis, *OPTICAL measurements, *MULTILAYERED thin films, *REFLECTOMETRY, *GEOMETRIC modeling, *THIN films

Laser Return-Path Ellipsometry in Monitoring Vacuum Oxidation of AISI-321 Steel.

Autoren: Kotenev, V. A.¹ (AUTHOR) m-protect@mail.ru

Quelle: Protection of Metals & Physical Chemistry of Surfaces. Jun2025, Vol. 61 Issue 3, p751-758. 8p.

Schlagwörter: *OXIDATION, *ELLIPSOMETRY, *PARTIAL oxidation, *LIGHT sources, *STEEL, *OXIDE coating, *PROCESS control systems, *AUGER electron spectroscopy

Ellipsometric study of Ag6+x(P1-xSix)S5I single crystals.

Alternate Title: Еліпсометричне дослідження монокристалів Ag6+x(P1-xSix)S5I.

Autoren: Pogodin, A. I. Pop, M. M. Shender, I. O. et al.

Quelle: Semiconductor Physics, Quantum Electronics & Optoelectronics. 2025, Vol. 28 Issue 2, p215-220. 6p.

Schlagwörter: *ELLIPSOMETRY, *SINGLE crystals, *SOLID solutions, *OPACITY (Optics), *X-ray diffraction, *ATTENUATION coefficients

Frequency spectra in the ATR mode of ellipsometric parameters of a periodic medium with a resonant defect in which polaritons are excited.

Autoren: Yatsyshen, Valery¹ valeryyat@gmail.com

Quelle: EPJ Web of Conferences. 2/17/2025, Vol. 318, p1-7. 7p.

Schlagwörter: *FREQUENCY spectra, *ELLIPSOMETRY, *RESONANT tunneling, *POLARIZATION (Electricity), *SEMICONDUCTORS

Spectroscopic ellipsometry of epitaxially stressed ferroelectric films.

Autoren: Nepomniashchaia, N. Pacherova, O. Kocourek, T. et al.

Quelle: Journal of Applied Physics; 1/7/2025, Vol. 137 Issue 1, p1-10, 10p

Schlagwörter: PERMITTIVITY, FERROELECTRIC thin films, SUBSTRATES (Materials science), VALUATION of real property, ELLIPSOMETRY

Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function.

Autoren: Baron, Elias Goldhahn, Rüdiger Espinoza, Shirly et al.

Quelle: Journal of Applied Physics. 8/21/2023, Vol. 134 Issue 7, p1-10. 10p.

Schlagwörter: *PERMITTIVITY, *ELLIPSOMETRY, *CONDUCTION bands, *VALENCE bands, *GALLIUM nitride, *OXYGEN carriers, *CARRIER density

Optical constants of polycrystalline Al0.25Ga0.75P and Al0.9Ga0.1As determined by variable-angle spectroscopic ellipsometry.

Autoren: Quispe, D. Eng, B. Kim, M. et al.

Quelle: Journal of Applied Physics. 8/21/2023, Vol. 134 Issue 7, p1-14. 14p.

Schlagwörter: *OPTICAL constants, *ELLIPSOMETRY, *DOPING agents (Chemistry), *REFRACTIVE index, *POLYCRYSTALLINE silicon