Suchergebnisse - "ELECTRON mobility"

Electronic mobility, doping, and defects in epitaxial BaZrS3 chalcogenide perovskite thin films.

Autoren: Van Sambeek, Jack Dong, Jessica Ievlev, Anton V. et al.

Quelle: Journal of Applied Physics. 8/28/2025, Vol. 138 Issue 8, p1-7. 7p.

Schlagwörter: *ELECTRON mobility, *THIN films, *MOLECULAR beam epitaxy, *BARIUM films (Metal coating), *CHALCOGENIDES, *PHOTOVOLTAIC power generation

Utilizing hybridization effects to tune morphology and electron mobility of Y6 through asymmetric small- and large-scale modifications of terminal groups.

Autoren: Zhu, Xiping Cao, Zhijun Liu, Huake et al.

Quelle: Journal of Chemical Physics. 4/28/2025, Vol. 162 Issue 16, p1-11. 11p.

Schlagwörter: *ELECTRON mobility, *FRONTIER orbitals, *REORGANIZATION energy, *ELECTRIC potential, *SOLAR cells, *CHARGE carrier mobility

Sn9C15 monolayer with desirable bandgap, high carrier mobilities, and broadband light absorption for photovoltaic devices.

Autoren: Gao, Si-Yan Zheng, Yi-Feng He, Shu-Qiang et al.

Quelle: Journal of Chemical Physics. 4/7/2025, Vol. 162 Issue 13, p1-12. 12p.

Schlagwörter: *CARBON-based materials, *ELECTRON mobility, *BINDING energy, *CRYSTAL lattices, *CHEMICAL properties, *EXCITON theory

Cryogenic Trapping Effects in GaN-HEMTs: Influences of Fe-Doped Buffer and Field Plates

Autoren: Mebarki, Mohamed Aniss Castillo, Ragnar Ferrand-Drake Del Meledin, Denis et al.

Quelle: IEEE Transactions on Electron Devices. 72(8):4042-4048

Schlagwörter: Logic gates, MODFETs, HEMTs, Pulse measurements, Iron, Cryogenics, Current measurement, Electron traps, Lighting, Performance evaluation, Cryogenic, field plates (FPs), GaN high electron mobility transistors (HEMTs), iron (Fe), traps

Dateibeschreibung: electronic

Zugangs-URL: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-216797
https://doi.org/10.1109/TED.2025.3581541

Exceptional ballisticity in monolayer BX (X = P, As, Sb) transistors.

Autoren: Guha, Sirsha Bhattacharya, Sitangshu Mahapatra, Santanu

Quelle: Journal of Applied Physics. 3/7/2025, Vol. 137 Issue 9, p1-12. 12p.

Schlagwörter: *AB-initio calculations, *ELECTRON mobility, *DEFORMATION potential, *INTEGRATED circuits, *BORON compounds

Temperature Estimation in FinFET Devices Based on Effective Electron Mobility.

Autoren: Bahri, Haifa Jaba, Nejeh Nasri, Faouzi et al.

Quelle: International Journal of High Speed Electronics & Systems. Mar2026, Vol. 35 Issue 1, p1-10. 10p.

Schlagwörter: *FINITE element method, DRIFT diffusion models, ELECTRON mobility, HEAT transfer, TRANSISTORS

Ensemble Monte Carlo transport studies of zinc-blende cuprous halides.

Autoren: Kim, Min Hyeok Kong, Byoung Don

Quelle: Journal of Applied Physics. 11/7/2024, Vol. 136 Issue 17, p1-12. 12p.

Schlagwörter: *ELECTRON mobility, *DEFORMATION potential, *VALENCE bands, *HOLE mobility, *ELECTRONIC structure

Highly emissive boron-α-thioimidinates: substituent control of photophysics and charge transport properties.

Autoren: Murali, Anna Chandrasekar Raj, Ankit Veerapathiran, Sabari et al.

Quelle: Chemical Communications. 12/4/2025, Vol. 61 Issue 93, p18396-18399. 4p.

Schlagwörter: *EMISSIVITY, *ELECTRON mobility, *CHARGE transfer, *BORON, *BORON compounds, *ORGANIC electronics, *OPTICAL properties

Improved Electron Transport Properties in InSb/Ga0.22In0.78Sb Composite Channel HEMT Structures.

Autoren: Oba, Tatsuhisa Jinnai, Tomoki Ebihara, Reo et al.

Quelle: Physica Status Solidi. A: Applications & Materials Science. Nov2025, p1. 7p. 10 Illustrations.

Schlagwörter: *ELECTRON mobility, *ELECTRON transport, *TERAHERTZ technology, *GALLIUM antimonide, *MODULATION-doped field-effect transistors, *INDIUM antimonide, *DOPING agents (Chemistry)

Intramolecular Noncovalent Interaction‐Driven Syn‐/Anti‐Conformational Regulation in Nonfused‐Ring Electron Acceptors.

Autoren: Wang, Sixuan Wang, Siying Zeng, Rui et al.

Quelle: Angewandte Chemie International Edition. 11/24/2025, Vol. 64 Issue 48, p1-9. 9p.

Schlagwörter: *MOLECULAR conformation, *ELECTRON mobility, *INTERMOLECULAR interactions, *MOLECULAR orientation, *MOLECULAR shapes

Optimal layer thickness and junction temperature of GaN HEMTs based on bias-dependent non-uniform heat source model.

Autoren: Wu, Dan Gan, Bing-Yu Luo, Qi et al.

Quelle: Applied Physics Letters. 11/3/2025, Vol. 127 Issue 18, p1-7. 7p.

Schlagwörter: *GALLIUM nitride, *ELECTRON mobility, *THERMAL analysis, *THERMAL conductivity, *PREDICTION models

Investigating the High Electron Mobilities and Transport Scattering Processes in 2D Non‐Van Der Waals Bi2O2Te Nanosheet Films.

Autoren: Chomngam, Sasithorn Pimanpang, Samuk Ruttanapun, Chesta et al.

Quelle: Advanced Theory & Simulations. Nov2025, Vol. 8 Issue 11, p1-7. 7p.

Schlagwörter: *ELECTRON mobility, *ELECTRON transport, *NANOSTRUCTURED materials, *ELECTRONIC systems, *SEMICONDUCTORS, *BISMUTH trioxide, *SEMICONDUCTOR devices

Modulating Micro‐Environments in Tri‐Motif Molecular Junction COF for to Boost Photocatalytic CO2 Reduction.

Autoren: Cui, Jinxian Wang, Lu‐Yao Wang, Xiang et al.

Quelle: Advanced Functional Materials. Oct2025, p1. 11p. 7 Illustrations.

Schlagwörter: *ELECTRON mobility, *ELECTRON-hole recombination, *CATALYTIC domains, *PHOTOREDUCTION

High Electron Charge Carrier Mobility in the Nematic Phase of a Roof‐Shaped Nematogen with Optimum Molecular Biaxiality.

Autoren: Lehmann, Matthias Scheuring, Nikolai Mager, Loïc et al.

Quelle: Advanced Science. 10/13/2025, Vol. 12 Issue 38, p1-7. 7p.

Schlagwörter: *ELECTRON mobility, *NEMATIC liquid crystals, *LIQUID crystals, *MOLECULAR self-assembly, *X-ray scattering, *MOLECULAR orientation, *CHARGE carriers

Theoretical investigation of alkyl, alkoxy, and alkoxysilyl group effects on charge carrier mobilities in perylene diimide.

Autoren: Danwé Adjéoua Déma, Blaise Ousmanou Bouba, Marius Tchangnwa Nya, Fridolin et al.

Quelle: Polymer Bulletin. Oct2025, Vol. 82 Issue 15, p9977-10001. 25p.

Schlagwörter: *ELECTRON mobility, *CHARGE carriers, *CHARGE transfer, *COMPUTATIONAL chemistry, *ALKOXY group, *ALKYL group, *PERYLENE

Leveraging high fluence and low pressure for pulsed laser deposition of high-mobility γ-Al2O3/SrTiO3 heterostructure growth.

Autoren: Hvid-Olsen, Thor Hoegfeldt, Christina Chanda, Amit et al.

Quelle: Journal of Applied Physics; 9/28/2025, Vol. 138 Issue 12, p1-8, 8p

Schlagwörter: HETEROSTRUCTURES, OXIDES, TWO-dimensional electron gas, ELECTRON mobility, ELECTRICAL conductors

Electronic mobility, doping, and defects in epitaxial BaZrS3 chalcogenide perovskite thin films.

Autoren: Van Sambeek, Jack Dong, Jessica Ievlev, Anton V. et al.

Quelle: Journal of Applied Physics; 8/28/2025, Vol. 138 Issue 8, p1-7, 7p

Schlagwörter: ELECTRON mobility, THIN films, MOLECULAR beam epitaxy, BARIUM films (Metal coating), CHALCOGENIDES, PHOTOVOLTAIC power generation

Enhanced magnetic remanence and electron mobility in (100)-epitaxial NdN thin films.

Autoren: Van Koughnet, K. Holmes-Hewett, W. F. Ruck, B. J.

Quelle: Journal of Applied Physics; 8/14/2025, Vol. 138 Issue 6, p1-7, 7p

Schlagwörter: RARE earth oxides, THIN films, ELECTRON mobility, EPITAXY, ELECTRON diffraction

A statistical study on the origin of the polarization-dependent leakage in ferroelectric aluminum scandium nitride films.

Autoren: Salcedo, Guillermo A. Harrington, Michael Nikodemski, Stefan et al.

Quelle: Journal of Applied Physics; 7/28/2025, Vol. 138 Issue 4, p1-10, 10p

Schlagwörter: ALUMINUM nitride films, ELECTRIC leakage, POOLE-Frenkel effect, ELECTRON mobility, FERROELECTRIC crystals, STATISTICS, CURRENT-voltage characteristics, NONVOLATILE memory

Incorporation of divalent transition-metal ions in bulk In2O3 single crystals grown from the melt and their impact on optical and electrical properties.

Autoren: Galazka, Zbigniew Fiedler, Andreas Pietsch, Mike et al.

Quelle: Journal of Applied Physics; 7/14/2025, Vol. 138 Issue 2, p1-9, 9p

Schlagwörter: TRANSITION metal ions, INDIUM oxide, DOPING agents (Chemistry), HEAT treatment, ELECTRIC properties, OPTICAL properties, SINGLE crystals, ELECTRON mobility