Suchergebnisse - "Deposition"

Quality improvement and evaluation for profile responses in cloud-based additive manufacturing processes.

Autoren: Zhai, Cuihong Wang, Jianjun Xu, Jingxuan et al.

Quelle: International Journal of Production Research. Sep2025, Vol. 63 Issue 17, p6411-6429. 19p.

Schlagwörter: *RAPID prototyping, *QUALITY control, *MATHEMATICAL optimization, *DATA analysis, THREE-dimensional printing, FUSED deposition modeling, PROCESS capability, STABILITY of linear systems

High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K.

Autoren: Acharya, Sudip Fischer, Alec Rosson, Nicholas et al.

Quelle: Journal of Applied Physics. 11/7/2025, Vol. 138 Issue 17, p1-9. 9p.

Schlagwörter: *CHEMICAL vapor deposition, *GERMANIUM alloys, *COMPLEMENTARY metal oxide semiconductors, *PHOTOLUMINESCENCE, *WAVELENGTHS

Threading dislocations in epitaxial GeSn film directly grown on (001) Si substrates.

Autoren: Jiang, Jiechao Grzybowski, Gordon J. Meletis, Efstathios I. et al.

Quelle: Journal of Applied Physics. 11/7/2025, Vol. 138 Issue 17, p1-11. 11p.

Schlagwörter: *PHOTONIC crystals, *PLASMA-enhanced chemical vapor deposition, *GERMANIUM alloys, *THIN films, *MICROSTRUCTURE

Chemical reaction mechanism between trimethylgallium and oxygen for β-gallium oxide growth: Thermodynamic and experimental studies.

Autoren: Goto, Ken Dhora, Andri Schubert, Mathias et al.

Quelle: Journal of Applied Physics. 9/7/2025, Vol. 138 Issue 9, p1-13. 13p.

Schlagwörter: *CHEMICAL reactions, *METAL organic chemical vapor deposition, *THERMODYNAMICS, *CHEMICAL vapor deposition, *ATOMIC layer deposition

Deep level defects in MOCVD-grown β-(AlxGa1−x)2O3.

Autoren: Shuai, Quentin H. Ghadi, Hemant Cornuelle, Evan et al.

Quelle: Journal of Applied Physics. 9/7/2025, Vol. 138 Issue 9, p1-10. 10p.

Schlagwörter: *METAL organic chemical vapor deposition, *CHEMICAL vapor deposition, *CHEMICAL beam epitaxy, *EPITAXIAL layers, *OPTICAL spectroscopy, *DEEP level transient spectroscopy

High kinetic stability and high density of Ir(ppy)3 doped organic semiconductor glasses.

Autoren: Lee, Yejung Cheng, Shinian Yu, Lian et al.

Quelle: Journal of Chemical Physics. 9/28/2025, Vol. 163 Issue 12, p1-9. 9p.

Schlagwörter: *CHALCOGENIDE glass, *PHYSICAL vapor deposition, *ORGANIC semiconductors, *ORGANIC light emitting diodes, *ELLIPSOMETRY

Effects of hydrogen on sputter-deposited boron carbide films.

Autoren: Wong, M. S. Taylor, G. V. Seo, M. et al.

Quelle: Journal of Applied Physics. 9/7/2025, Vol. 138 Issue 9, p1-8. 8p.

Schlagwörter: *HYDROGEN, *SPUTTER deposition, *BORON carbides, *THIN films, *SPUTTERING (Physics)

Nonconventional growth characteristics of tin silicon oxide grown by thermal atomic layer deposition using H2O as oxidant.

Autoren: Lee, Sanghun Yoo, Namkyu Seo, Seunggi et al.

Quelle: Journal of Chemical Physics. 8/21/2025, Vol. 163 Issue 7, p1-10. 10p.

Schlagwörter: *SILICON oxide, *ATOMIC layer deposition, *AMORPHOUS carbon, *DIMETHYLAMINE, *SURFACE roughness

Comparative analysis of ferroelectric domain wall motion under cycling stress of HfZrO2 fabricated by thermal and plasma-enhanced atomic layer depositions.

Autoren: Ryu, Sangwoo Koo, Ryun-Han Shin, Wonjun et al.

Quelle: Journal of Chemical Physics. 8/7/2025, Vol. 163 Issue 5, p1-8. 8p.

Schlagwörter: *HAFNIUM oxide, *ATOMIC layer deposition, *CYCLIC loads, *FERROELECTRIC crystals, *ACTIVATION energy, *FERROELECTRIC transitions

Study of the interfacial reaction of high-κ Al2O3 gate oxides with IGZO.

Autoren: Alshanbari, Reem Imai, Takahito Qi, Yuanshen et al.

Quelle: Journal of Applied Physics. 8/7/2025, Vol. 138 Issue 5, p1-9. 9p.

Schlagwörter: *INTERFACIAL reactions, *ATOMIC layer deposition, *DIELECTRIC materials, *DETERIORATION of materials, *INDIUM gallium zinc oxide, *ALUMINUM oxide

Hybrid plasma model for reactive deposition of CrN thin films by deep oscillation magnetron sputtering.

Autoren: Gao, J. Y. Ferreira, F. Lei, M. K.

Quelle: Journal of Applied Physics. 6/28/2025, Vol. 137 Issue 24, p1-20. 20p.

Schlagwörter: *THIN film deposition, *REACTIVE sputtering, *SPUTTER deposition, *MAGNETRON sputtering, *CHEMICAL reactions

Maskless epitaxial overgrowth of diamond on 3D patterns formed by self-organization in an oxidation process.

Autoren: Fendt, Johannes Schreck, Matthias

Quelle: Journal of Applied Physics. 6/21/2025, Vol. 137 Issue 23, p1-11. 11p.

Schlagwörter: *CHEMICAL vapor deposition, *MICROWAVE plasmas, *DISLOCATION density, *PLASMA etching, *ETCHING

High density supercapacitors with atomic layer deposited SiO2 dielectric as solid state electrolyte.

Autoren: Zhu, Bao Wang, Chenyan Shang, Ze et al.

Quelle: Journal of Applied Physics. 6/14/2025, Vol. 137 Issue 22, p1-7. 7p.

Schlagwörter: *SOLID electrolytes, *ATOMIC layer deposition, *ENERGY storage, *MASS spectrometry, *THIN films

Enhancing electrical properties of BiFeO3-based thin films via introducing VO2 overlayers with double-interface charge barrier.

Autoren: Feng, Min Fu, Meng-Yao Peng, Huai-Yu et al.

Quelle: Journal of Applied Physics. 6/14/2025, Vol. 137 Issue 22, p1-9. 9p.

Schlagwörter: *PULSED laser deposition, *HIGH temperature electronics, *FLEXIBLE electronics, *STRAY currents, *FERROELECTRIC materials

Ferroelectricity and magnetic order at room temperature and electronic states of bismuth iron oxyfluoride thin films.

Autoren: Kamigaito, Akiko Sano, Mizuho Shigematsu, Kei et al.

Quelle: Journal of Applied Physics. 6/7/2025, Vol. 137 Issue 21, p1-8. 8p.

Schlagwörter: *PULSED laser deposition, *CONDUCTION bands, *VALENCE bands, *THIN films, *STRAY currents

Study of diffusion length of individual ZnO nanowire.

Autoren: Evstafieva, M. V. Yakimov, E. B. Yakimov, E. E. et al.

Quelle: Journal of Applied Physics. 5/28/2025, Vol. 137 Issue 20, p1-6. 6p.

Schlagwörter: *CHEMICAL vapor deposition, *OHMIC contacts, *PLATINUM electrodes, *ELECTRON beams, *ION beams

Unveiling the photo-physical properties of NaCl promoted large area WS2 monolayers.

Autoren: Srivastava, Rohit R. Kamal, Serene Samokhvalov, Alexander et al.

Quelle: Journal of Applied Physics. 5/28/2025, Vol. 137 Issue 20, p1-15. 15p.

Schlagwörter: *CHEMICAL vapor deposition, *OPTOELECTRONIC devices, *ELECTRONIC excitation, *SUBSTRATES (Materials science), *RAMAN spectroscopy

Characteristics of 2DEG generated at the heterointerface of an AlN/GaN structure grown on an AlN substrate using metal organic vapor phase epitaxy.

Autoren: Yoshikawa, Akira Kumabe, Takeru Sugiyama, Sho et al.

Quelle: Journal of Applied Physics. 5/21/2025, Vol. 137 Issue 19, p1-7. 7p.

Schlagwörter: *METAL organic chemical vapor deposition, *TWO-dimensional electron gas, *HALL effect, *CARRIER density, *ATOMIC force microscopy, *MODULATION-doped field-effect transistors

Carrier transport properties of a SiC metal insulator semiconductor Schottky diode with a boron nitride layer.

Autoren: Kumar, Ravi Ranjan Marye, Shambel Abate Shen, Yao-Luen et al.

Quelle: Journal of Applied Physics. 5/7/2025, Vol. 137 Issue 17, p1-7. 7p.

Schlagwörter: *PLASMA-enhanced chemical vapor deposition, *METAL insulator semiconductors, *SEMICONDUCTOR diodes, *SCHOTTKY barrier diodes, *STRAY currents

Thermal conductivity of SiO2 grown by plasma enhanced chemical vapor deposition.

Autoren: He, Rongjie Sun, Bo

Quelle: Journal of Applied Physics. 5/7/2025, Vol. 137 Issue 17, p1-5. 5p.

Schlagwörter: *SPECIFIC heat capacity, *CHEMICAL vapor deposition, *THERMAL conductivity, *SEMICONDUCTOR materials, *TEMPERATURE