Suchergebnisse - "ANNEALING of crystals"

Thermal transport in heavy-ion irradiated GaN: The effect of static and dynamic annealing.

Autoren: Yan, Wujuan Xue, Yuanyuan Zhou, Wenjiang et al.

Quelle: Journal of Applied Physics. 10/14/2025, Vol. 138 Issue 14, p1-7. 7p.

Schlagwörter: *GALLIUM nitride, *ANNEALING of crystals, *SEMICONDUCTORS, *CRYSTAL defects, *HIGH temperatures

Band energy and electronic behavior of HfO2 on In2O3 thin films enhanced by oxygen annealing.

Autoren: Yu, Tung-Yuan Jan, Wen-Shin Wu, YewChung Sermon et al.

Quelle: Journal of Applied Physics; 10/14/2025, Vol. 138 Issue 14, p1-10, 10p

Schlagwörter: ELECTRONIC structure, ENERGY bands, HAFNIUM oxide, THIN films, ANNEALING of crystals, OXYGEN

Defect-annealing-induced optical gain recovery in electron-irradiated 4H-SiC UV phototransistors.

Autoren: Yang, Qunsi Wang, Yifu Liu, Xinghua et al.

Quelle: Applied Physics Letters. 9/8/2025, Vol. 127 Issue 10, p1-6. 6p.

Schlagwörter: *PHOTOTRANSISTORS, *ANNEALING of crystals, *CRYSTAL defects, *SILICON carbide, *ULTRAVIOLET radiation

Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals.

Autoren: Nakagawa, S. Shizu, T. Imai, T. et al.

Quelle: Journal of Applied Physics. 4/28/2023, Vol. 133 Issue 16, p1-8. 8p.

Schlagwörter: *ANNEALING of crystals, *SUBMILLIMETER waves, *METALLIC thin films, *HYSTERESIS loop, *ANNEALING of metals, *THIN film devices, *HIGH temperature superconductors, *SINGLE crystals, *JOSEPHSON junctions

Annealing Time Dependence on Creation of SiV, GeV, and SnV in Diamond by Atmospheric Annealing at 1800 °C.

Autoren: Baba, Tomoya Iizawa, Masatomi Takenaka, Kouta et al.

Quelle: Physica Status Solidi. A: Applications & Materials Science. Mar2025, Vol. 222 Issue 6, p1-8. 8p.

Schlagwörter: *DIAMOND crystals, *ANNEALING of crystals, *ION implantation, *GAS flow, *NOBLE gases

Characterization of anisotropic charge carrier mobility in PM6:Y6 blend film using time-resolved terahertz spectroscopy.

Autoren: He, Jiale Li, Jiacong Yang, Hanyue et al.

Quelle: Applied Physics Letters; 11/24/2025, Vol. 127 Issue 21, p1-6, 6p

Schlagwörter: CHARGE carrier mobility, TIME-resolved spectroscopy, PHOTOVOLTAIC power generation, ELECTRON donor-acceptor complexes, ANNEALING of crystals

Effect of Annealing on the Electrical Conductivity and Thermoelectric Power of PbTe, SnTe, and Pb0.75Sn0.25Te Crystals.

Autoren: Bagiyeva, G. Z. Abdinov, A. Sh. Aliyeva, T. J. et al.

Quelle: Inorganic Materials. Dec2024, Vol. 60 Issue 14, p1579-1584. 6p.

Schlagwörter: *ANNEALING of crystals, *THERMOELECTRIC power, *CRYSTAL growth, *SINGLE crystals, *ELECTRIC conductivity

Ternary Ni−Sb−Te Nanoparticles by Co‐Reduction in a One‐Pot Microwave‐Assisted Polyol Process.

Autoren: Wang, Yiran Carrillo‐Aravena, Eduardo Roslova, Maria et al.

Quelle: European Journal of Inorganic Chemistry. 12/20/2024, Vol. 27 Issue 36, p1-9. 9p.

Schlagwörter: *ANTIMONY telluride, *ANNEALING of crystals, *ETHYLENE glycol, *CRYSTAL structure, *SINGLE crystals

Adaptation of the BaAl4 Type to Small Cations: The Case of NaGa4.

Autoren: Yu, Chia‐Chi Prots, Yurii Koželj, Primož et al.

Quelle: Chemistry - A European Journal. 10/23/2024, Vol. 30 Issue 59, p1-8. 8p.

Schlagwörter: *ANNEALING of crystals, *SINGLE crystals, *CRYSTAL structure, *SPACE groups, *GALLIUM

Study on the preparation, formation mechanism, and permanent magnetic properties of anisotropic Nd–Fe–B spherical magnetic powder.

Autoren: Zhang, Wenhao Xia, Puyue Wang, Zhaomeng et al.

Quelle: Applied Physics Letters; 9/8/2025, Vol. 127 Issue 10, p1-6, 6p

Schlagwörter: PERMANENT magnets, MAGNETIC anisotropy, ANNEALING of crystals, GRAIN growth, CRYSTALLIZATION

The effect of O2 high-temperature annealing on the quality of Al2O3/Ga2O3 interface.

Autoren: Chen, Chunyan Wu, Yutong Jiang, Bing et al.

Quelle: Applied Physics Letters; 8/11/2025, Vol. 127 Issue 6, p1-8, 8p

Schlagwörter: ALUMINUM oxide, HIGH temperatures, ANNEALING of crystals, SURFACE passivation, OXYGEN vacancy, METAL oxide semiconductor capacitors

Vacancy-Type Defects in HfO 2 Layers and Their Role in Amorphous-to-Crystalline Transition Studied by Monoenergetic Positron Beams.

Autoren: Uedono, Akira Kawakami, Kazuya Kuribara, Tatsunori et al.

Quelle: IEEE Transactions on Semiconductor Manufacturing; Aug2025, Vol. 38 Issue 3, p463-468, 6p

Schlagwörter: HAFNIUM oxide films, OXYGEN vacancy, ATOMIC layer deposition, POSITRON beams, ANNEALING of crystals, GLASS transitions

Study on defects during Fe³⁺ doping and annealing in ADP crystals.

Autoren: You, Teng-Hui Dai, Yan-Meng Yu, Jian et al.

Quelle: CrystEngComm. 8/7/2024, Vol. 26 Issue 29, p3897-3910. 14p.

Schlagwörter: *ANNEALING of crystals, *INDUCTIVELY coupled plasma mass spectrometry, *X-ray photoelectron spectroscopy, *POSITRON annihilation, *RAMAN spectroscopy, *WAVENUMBER

Structural, microstructural, and optical properties of SnS films deposited by nanoink's spraying with a post-growth temperature treatment.

Autoren: Yevdokymenko, V. Pshenychnyi, R. Dobrozhan, О. et al.

Quelle: Applied Physics A: Materials Science & Processing. Aug2024, Vol. 130 Issue 8, p1-13. 13p.

Schlagwörter: *ATMOSPHERIC oxygen, *ANNEALING of crystals, *CRYSTAL lattices, *SCANNING electron microscopy, *COHERENT scattering

Crystal Growth and Luminescence Properties of TbGa3(BO3)4 Crystals.

Autoren: Rakhmanova, M. I. Kokh, K. A. Kononova, N. G. et al.

Quelle: Journal of Structural Chemistry. Apr2024, Vol. 65 Issue 4, p693-700. 8p.

Schlagwörter: *CRYSTAL growth, *ANNEALING of crystals, *LUMINESCENCE, *CRYSTALS, *SPACE groups

移动加热器法生长的CZT 晶体内部点缺陷 精细调控研究. (Chinese)

Alternate Title: Fine Modulation of Internal Point Defects in CZT Crystals Grown by the Traveling Heater Method. (English)

Autoren: 喻超 张博 王琦琦 et al.

Quelle: Journal of Synthetic Crystals; Jun2025, Vol. 54 Issue 6, p960-969, 10p

Schlagwörter: CHARGE carrier mobility, POINT defects, ANNEALING of crystals, ELECTRIC fields, TRANSIENT analysis

Intense green emitting Ho3+/Yb3+ Co-doped Sr2LaF7 upconversion nanocrystals for latent fingerprint detection.

Autoren: Janbandhu, Kapil S. Pawade, V.B. Modak, J.B.

Quelle: Materials Research Bulletin. Oct2025, Vol. 190, pN.PAG-N.PAG. 1p.

Schlagwörter: *FORENSIC fingerprinting, *ANNEALING of crystals, *ENERGY transfer, *X-ray diffraction, *NANOCRYSTALS

ZnO-In2O3-SnO2 THIN FILM TRANSPARENT HEATERS: TUNABLE ELECTROTHERMAL PROPERTIES THROUGH SUBSTRATE TEMPERATURE AND POSTGROWTH ANNEALING.

Autoren: AKYILDIZ, Hasan CAN, Hilal Aybike KIVRAK, Burak et al.

Quelle: Konya Journal of Engineering Sciences / Konya Mühendislik Bilimleri Dergisi; Mar2025, Vol. 13 Issue 1, p25-43, 19p

Schlagwörter: ZINC oxide, TIN oxides, THIN films, HEATING, THERMAL properties, ANNEALING of crystals

Comparative study of crystallization kinetics and phase segregation of triple cation and methylammonium lead iodide perovskites on moisture probing using synchrotron X‐ray based radiation.

Autoren: Shatsala, Miller Wanyonyi, Stellah Awino, Celline et al.

Quelle: Journal of Synchrotron Radiation; Jan2025, Vol. 32 Issue 1, p145-154, 10p

Schlagwörter: SOLAR cell efficiency, CRYSTALLIZATION kinetics, ANNEALING of crystals, PEROVSKITE, LEAD iodide

Crystal Evolution of Amorphous Poly(lactic acid) During Simultaneous Multi‐step Tensile Deformation and Annealing.

Autoren: Kajornprai, Todsapol Sringam, Jiradet Seejuntuek, Anucha et al.

Quelle: Journal of Polymer Science; Jan2025, Vol. 63 Issue 1, p192-203, 12p

Schlagwörter: ANNEALING of crystals, STRAINS & stresses (Mechanics), CRYSTAL structure, CRYSTAL orientation, LACTIC acid